K. Miyata
发表
K. Aratani,
S. Yasuda,
K. Prall,
2014,
2014 IEEE International Electron Devices Meeting.
T. Ikeda,
K. Ogiue,
M. Odaka,
1986,
1986 International Electron Devices Meeting.
A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput
Makoto Kitagawa,
Yasuhiro Terao,
Koji Miyata,
2011,
2011 IEEE International Solid-State Circuits Conference.
Yasuhisa Yamaji,
H. Juso,
Y. Matsune,
1997,
1997 Proceedings 47th Electronic Components and Technology Conference.