Bernard Beaumont

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

Pierre Gibart, Bernard Beaumont, F. D. Auret, 1998 .

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Pierre Gibart, Bernard Beaumont, E. Muñoz, 2004 .

Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1999 .

Si-doped AlxGa1-xN photoconductive detectors

Pierre Gibart, Bernard Beaumont, E. Muñoz, 1999 .

TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

Pierre Gibart, Bernard Beaumont, Nicolas Grandjean, 1999 .

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

Pierre Gibart, Bernard Beaumont, E. Muñoz, 1998 .

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Pierre Gibart, Bernard Beaumont, P. Vennégués, 2000 .

Radiation induced defects in MOVPE grown n-GaN

Pierre Gibart, Bernard Beaumont, F. D. Auret, 2000 .

Yellow luminescence and related deep states in undoped GaN

José Luis Sánchez-Rojas, P. Lorenzini, Pierre Gibart, 1997 .

Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN

Pierre Gibart, Bernard Beaumont, Martin Kuball, 2001 .

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

Pierre Gibart, Bernard Beaumont, Simon A. Rushworth, 2000 .

Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

Pierre Gibart, Bernard Beaumont, Eva Monroy, 1999 .

Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

Pierre Gibart, Bernard Beaumont, P. Muret, 2004 .

METALORGANIC VAPOR-PHASE EPITAXY-GROWN ALGAN MATERIALS FOR VISIBLE-BLIND ULTRAVIOLET PHOTODETECTOR APPLICATIONS

Bernard Beaumont, E. Muñoz, Eva Monroy, 1999 .

200 Mbit/s data transmission through 100 m of plastic optical fibre with nitride LEDs

Pleun Maaskant, Brian Corbett, Brendan Roycroft, 2002 .

Temperature dependence of photoluminescence intensities of undoped and doped GaN

Pierre Gibart, Bernard Beaumont, Nicolas Grandjean, 1999 .