G. He

Monolithically grown 2.5 μm InGaAs photodetector structures on GaP and GaP/Si (001) substrates

Xue Li, H. Gong, Q. Gong, 2019, Materials Research Express.

Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy

Q. Gong, Yi Gu, Yunhua Shi, 2019, Journal of Crystal Growth.

Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates

Y. Gu, G. He, X. Chen, 2018, AIP Advances.

Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds

X. Tao, Z. Jia, G. He, 2022 .