H. Maruska

发表

THE ROLE OF POLAR SPECIES IN THE AGGREGATION OF ASPHALTENES

H. Maruska, B. Rao, 1987 .

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

J. J. Tietjen, H. Maruska, J. Tietjen, 1969 .

III–Nitride UV Devices

M. Asif Khan, Edmundas Kuokstis, Hong Wang, 2005 .

GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates

C. Chen, Hong Wang, D. Hill, 2002 .

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1 1 00] oriented GaN substrates

C. Chen, D. Hill, G. Simin, 2002 .

Synthesis and Properties of ZnGeN2

H. Maruska, D. Stevenson, W. L. Larson, 1974 .

Effects of optical stress on the properties of sputtered amorphous silicon solar cells and thin films

T. Moustakas, H. Maruska, M. Hicks, 1983 .

Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

M. Khan, J. Yang, Jian Ping Zhang, 2005 .

Photocatalytic decomposition of water at semiconductor electrodes

A. Ghosh, H. Maruska, 1978 .

Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor‐insulator‐semiconductor and metal‐insulator‐semiconductor devices

A. Ghosh, T. Feng, H. Maruska, 1984 .

Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes

F. Namavar, H. Maruska, N. Kalkhoran, 1992 .

Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering

T. Moustakas, H. Maruska, R. Friedman, 1985 .

Visible electroluminescence from porous silicon np heterojunction diodes

F. Namavar, H. Maruska, N. Kalkhoran, 1992 .

Energy bands in quantum confined silicon light‐emitting diodes

F. Namavar, H. Maruska, N. Kalkhoran, 1993 .

Interfacial stability of SnO2/n‐Si and In2O3:Sn/n‐Si heterojunction solar cells

A. Ghosh, T. Feng, H. Maruska, 1983 .

Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

S. Ustin, C. Sung, J. Boo, 1996 .

Transition-metal dopants for extending the response of titanate photoelectrolysis anodes

A. Ghosh, H. Maruska, Amal K. Ghosh, 1979 .

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

Jamil A. Khan, M. Asif Khan, Max Shatalov, 2005 .

Electrical Transport Processes in Heavy Hydrocarbon Fluids

E. Forster, H. Maruska, J. Enard, 1985, IEEE Transactions on Electrical Insulation.

Effects of power and hydrogen in the discharge on the photovoltaic properties of sputtered amorphous silicon

T. Moustakas, H. Maruska, 1983 .

Influence of the wavelength of incident light on shunt conductance and fill factor in amorphous silicon solar cells

T. Moustakas, H. Maruska, 1984, IEEE Transactions on Electron Devices.

Theory of polycrystalline silicon solar cells: Effect of reduction in grain boundary recombination states

A. Ghosh, T. Feng, H. Maruska, 1980 .

Challenges For Flat Panel Display Phosphors

N. M. Kalkhoran, Themis Parodos, H. Maruska, 1994 .

Photoelectrolysis of water in sunlight with sensitized semiconductor electrodes

A. Ghosh, H. Maruska, A. K. Ghosh, 1977 .

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Grigory Simin, M. Asif Khan, Max Shatalov, 2004 .

Mechanism of light production in metal-insulator-semiconductor diodes; GaN:Mg violet light-emitting diodes

H. Maruska, D. A. Stevenson, D. Stevenson, 1974 .

The preparation and properties of vapor- deposited epitaxial InAs sub 1-x P sub x using arsine and phosphine.

R. Clough, H. Maruska, J. Tietjen, 1966 .

A study of oxide-based heterostructure photoelectrodes

A. Ghosh, H. Maruska, 1979 .

Efficiency of GaAs1 − xPx electroluminescent diodes

J. Pankove, H. Maruska, 1967 .

A modern perspective on the history of semiconductor nitride blue light sources

Walden C. Rhines, W. Rhines, H. Maruska, 2015 .

ELECTRIC CONDUCTIVITY OF RESIDUAL OILS

H. Maruska, J. Enard, 1984 .

OPTICAL ABSOPTION OF GaN

J. Pankove, H. Maruska, J. E. Berkeyheiser, 1970 .

Introduction Of Ions Into Wide Band Gap Semiconductors

S. Pearton, R. Vaudo, H. Maruska, 1997 .

Photoluminescence from freestanding GaN with (1010) orientation

H. Morkoç, D. Hill, M. Reshchikov, 2003 .

Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD

A. Davydov, T. Anderson, B. Pathangey, 1994 .

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Grigory Simin, Bruce H. T. Chai, C. Q. Chen, 2002 .

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

C. Chen, D. Hill, G. Simin, 2002 .

Optically controlled amorphous silicon photosensitive device

T. Moustakas, H. Maruska, M. Hicks, 1984, IEEE Transactions on Electron Devices.

Hall mobility of polycrystalline silicon

A. Ghosh, T. Feng, H. Maruska, 1980 .

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a -plane SiC Substrates

Junliang Yang, V. Adivarahan, M. Shatalov, 2004 .

Synthesis and Properties of ZnGeN2

H. Maruska, D. Stevenson, W. L. Larson, 1974 .

Violet luminescence of Mg‐doped GaN

Jacques I. Pankove, David A. Stevenson, J. Pankove, 1973 .

Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence

W. Rhines, H. Maruska, D. Stevenson, 1972 .

Luminescent properties of GaN

Jacques I. Pankove, J. Pankove, H. Maruska, 1970 .

250nmAlGaN light-emitting diodes

M. Asif Khan, Max Shatalov, Vinod Adivarahan, 2004 .

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1 0 0) and (0 0 0 1) GaN

Wei Li, Anirban Bhattacharyya, Bruce H. T. Chai, 2003 .

MOCVD growth of GaN films on lattice-matched oxide substrates

D. Kisker, H. Chai, H. Maruska, 1996 .

How it really happened: The history of p‐type doping of gallium nitride

H. Maruska, Rakesh Jain, 2007 .

Microstructural Observations on Gallium Nitride Light‐Emitting Diodes

H. Maruska, D. Stevenson, L. J. Anderson, 1974 .