J. Li

发表

Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

M. Khan, J. Lin, Hongxing Jiang, 1997 .

Two-dimensional electron gas in AlGaN/GaN heterostructures

Hongxing Jiang, M. Khan, J. Lin, 1997 .

Optical and electrical properties of Mg-doped p-type AlxGa1−xN

Mim Lal Nakarmi, Tom Oder, Hongxing Jiang, 2002 .

Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells

K. H. Kim, J. Lin, Hongxing Jiang, 2001 .

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

Rajendra Dahal, Hongxing Jiang, S. Majety, 2012 .

Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures

J. Lin, Hongxing Jiang, M. Nakarmi, 2002 .

Persistent photoconductivity in Ga1−xInxNyAs1−y

S. Kurtz, J. Lin, Hongxing Jiang, 1999 .

Achieving highly conductive AlGaN alloys with high Al contents

Hongxing Jiang, M. Nakarmi, Jingyu Lin, 2002 .

GaN microdisk light emitting diodes

Hongxing Jiang, Jingyu Lin, Hongxing Jiang, 2000 .

200nm deep ultraviolet photodetectors based on AlN

J. Lin, Hongxing Jiang, Zhaoyang Fan, 2006 .

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

U. Kroth, M. Richter, J. Lin, 2008 .

Exciton localization in AlGaN alloys

Hongxing Jiang, N. Nepal, M. Nakarmi, 2006 .

Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

J. Lin, Hongxing Jiang, D. Mcilroy, 1997 .

Optical properties of AlN and GaN in elevated temperatures

K. B. Nam, Hongxing Jiang, J. Lin, 2004 .

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers

Jing Li, S. Majety, Hongxing Jiang, 2014 .

Growth and optimization of extremely high-pulse-power graded-index separate confinement heterostructure quantum well AlGaAs/InGaAs diode lasers with broadened waveguides

J. Abeles, Z. Shellenbarger, V. Khalfin, 2005 .

GaN-based waveguide devices for long-wavelength optical communications

Rongqing Hui, Hongxing Jiang, Yueting Wan, 2003 .

Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

J. Lin, Hongxing Jiang, J. Li, 2002 .

Unique optical properties of AlGaN alloys and related ultraviolet emitters

K. B. Nam, Mim Lal Nakarmi, Hongxing Jiang, 2004 .

Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

Hongxing Jiang, Jingyu Lin, J. Li, 1999 .

Growth and optical properties of InxAlyGa1−x−yN quaternary alloys

K. B. Nam, Hongxing Jiang, K. H. Kim, 2001 .

III-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim, Hongxing Jiang, J. Lin, 2003 .

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

J. Lin, Hongxing Jiang, R. Dahal, 2014 .

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

Rajendra Dahal, Hongxing Jiang, S. Majety, 2012 .

Optical and electrical properties of Al-rich AlGaN alloys

K. B. Nam, Hongxing Jiang, Jingyu Lin, 2001 .

Birefringence of GaN/AlGaN optical waveguides

R. Hui, J. Lin, Hongxing Jiang, 2003 .

Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys

Tom Oder, Hongxing Jiang, J. Lin, 2000 .

Thermoelectric properties of InxGa1−xN alloys

Rajendra Dahal, Hongxing Jiang, B. N. Pantha, 2008 .

High mobility InN epilayers grown on AlN epilayer templates

Hongxing Jiang, Neelam Khan, A. Sedhain, 2008 .

Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures

J. Lin, Hongxing Jiang, J. Li, 2015 .

Band-edge transitions in hexagonal boron nitride epilayers

Rajendra Dahal, Hongxing Jiang, S. Majety, 2012 .

Correlation between optoelectronic and structural properties and epilayer thickness of AlN

David W. Weyburne, Rajendra Dahal, Neeraj Nepal, 2007 .

Thermal and ion beam induced reactions in Ni thin films on BP(100)

Y. Kumashiro, P. Révész, J. Mayer, 1989 .

Single phase InxGa1−xN(0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition

Hongxing Jiang, B. N. Pantha, J. Lin, 2008 .

Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN

Hongxing Jiang, Xian-An Cao, S. LeBoeuf, 2006 .

Well-width dependence of the quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells

J. Lin, Hongxing Jiang, J. Li, 2000 .

Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells

Neelam Khan, J. Li, J. Z. Li, 2006 .

Nature of Mg impurities in GaN

Hadis Morkoç, Hongxing Jiang, Andrei Botchkarev, 1996 .

Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages

J. Lin, Hongxing Jiang, Zhaoyang Fan, 2002 .

Orientation dependent reactive ion etching of GaAs in SiCl4

I. Adesida, E. Wolf, J. Li, 1984 .

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Hongxing Jiang, M. Khan, J. Lin, 1998 .

Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells

J. Lin, Hongxing Jiang, J. Li, 2000 .