D. Biswas

发表

Growth and Characterization of MOCVD grown InP Quantum Dots on Si for Monolithic Integration

Nripendra N. Halder, Souvik Kundu, R. Mukherjee, 2014 .

Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration

Nripendra N. Halder, Souvik Kundu, R. Mukherjee, 2012, Journal of Nanoparticle Research.

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

S. K. Jana, D. Biswas, S. M. Dinara, 2017 .

Comparative study on hydrostatic strain, stress and dislocation density of Al0.3Ga0.7N/GaN heterostructure before and after a-Si3N4 passivation

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2015 .

Temperature dependent etching of Gallium Nitride layers grown by PA -MBE

Rahul Kumar, D. Biswas, Subhashis Das, 2015, 2015 International Conference on Microwave and Photonics (ICMAP).

Effect of Si3N4 Passivation on the Acetone Sensing Performance of Pd/AlGaN/GaN Heterostructure

S. Sharma, D. Biswas, Subhashis Das, 2017, Springer Proceedings in Physics.

A Strategic Review of Recent Progress in Metamorphic Quantum Well Based Heterostructure Electronic Devices

E. Chang, D. Biswas, S. Kundu, 2008, 2008 8th IEEE Conference on Nanotechnology.

A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications

S. Rathi, D. Biswas, U. P. Gomes, 2015 .

2DEG modulation in double quantum well enhancement mode nitride HEMT

Rahul Kumar, D. Biswas, S. Majumdar, 2015 .

Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics

Rahul Kumar, D. Biswas, Subhashis Das, 2018 .

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

A. Dabiran, P. Chow, E. Chang, 2014, Journal of Electronic Materials.

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

A. Dabiran, P. Chow, D. Biswas, 2013 .

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .

Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

D. Biswas, S. Majumdar, Sudipa Das, 2015 .

Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .

Acetone Adsorption Characteristics of Pd/AlGaN/GaN Heterostructure Grown by PAMBE: A Kinetic Interpretation at Low Temperature

S. Sharma, D. Biswas, Subhashis Das, 2018, 2018 IEEE SENSORS.

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

D. Biswas, Subhashis Das, Saptarsi Ghosh, 2017 .

Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

Rahul Kumar, D. Biswas, Subhashis Das, 2016 .

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

S. Rathi, D. Biswas, U. P. Gomes, 2015 .

Fabrication of E-mode InGaN/AlGaN/GaN HEMT using FIB based lithography

Chitrakant Sahu, D. Biswas, S. Majumdar, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Observation and analysis of kink effect during drain current inception of GaN HEMT

D. Biswas, Subhashis Das, P. Mukhopadhyay, 2018, Superlattices and Microstructures.

Wet Etching, Cleaning, and Passivation

D. Biswas, S. Tiku, 2016 .

Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode

Rahul Kumar, D. Biswas, Subhashis Das, 2015 .

Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode

D. Biswas, Subhashis Das, S. M. Dinara, 2014, 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

S. K. Jana, D. Biswas, Subhashis Das, 2016 .

Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

Nripendra N. Halder, Souvik Kundu, P. Biswas, 2014 .

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

S. K. Jana, D. Biswas, S. M. Dinara, 2014 .

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In0.17Al0.83N/GaN heterostructure on Si(111)

D. Biswas, Subhra Chowdhury, 2015 .

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Rahul Kumar, D. Biswas, S. M. Dinara, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs∕Ge∕SixGe1−x∕Si substrate

G. Luo, C. Y. Chang, Shyh Wang, 2006 .

Self-assembled In/sub 0.22/Ga/sub 0.78/As quantum dots grown on GaAs/Ge/Si/sub x/Ge/sub 1-x//Si substrate

G. Luo, E. Chang, D. Biswas, 2005, 5th IEEE Conference on Nanotechnology, 2005..

A safety system for GSMBE part II

H. Morkoç, D. Biswas, 1992 .

Measurements and Characterization

D. Biswas, S. Tiku, 2016 .

Schottky Diodes and FET Processing

D. Biswas, S. Tiku, 2016 .

Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon

D. Biswas, Saptarsi Ghosh, P. Mukhopadhyay, 2015 .

Diffusion in III–V Compound Semiconductors

D. Biswas, S. Tiku, 2016 .

Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Rahul Kumar, D. Biswas, 2016 .

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

Rahul Kumar, D. Biswas, Subhashis Das, 2015 .

Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

Rahul Kumar, D. Biswas, Subhashis Das, 2016, Electronic Materials Letters.

Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE

D. Biswas, Subhashis Das, Saptarsi Ghosh, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Rahul Kumar, D. Biswas, S. M. Dinara, 2015 .

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)

Rahul Kumar, P. Banerji, D. Biswas, 2015 .

III V on Si substrate A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices

Kuldeep, S. Rathi, D. Biswas, 2012 .

An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers

S. K. Jana, A. K. Panda, P. Chow, 2018, Electronic Materials Letters.

Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles

D. Biswas, Subhashis Das, S. Majumdar, 2017 .

Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

Dhrubes Biswas, Rahul Kumar, Rahul Kumar, 2017, IEEE Transactions on Electron Devices.

Fabrication of n-ZnO/p-GaAs Heterojunction and Prediction of Its Luminescence Based on Photoluminescence Study

S. K. Jana, P. Biswas, P. Banerji, 2014 .

Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis

Rahul Kumar, S. Ghosh, D. Biswas, 2014, 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).

Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K

Dhrubes Biswas, Rahul Kumar, Rahul Kumar, 2017, IEEE Electron Device Letters.

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Rahul Kumar, D. Biswas, Subhashis Das, 2015 .

Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening

S. K. Jana, Rahul Kumar, D. Biswas, 2015, Electronic Materials Letters.

Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

Rahul Kumar, D. Biswas, S. M. Dinara, 2016 .

III-V Integrated Circuit Fabrication Technology

D. Biswas, S. Tiku, 2016 .

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2014 .

Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

Soumen Das, D. Biswas, S. M. Dinara, 2015 .

Gate leakage current reduction with advancement of graded barrier AlGaN/GaN HEMT

D. Biswas, P. Das, 2011 .

Growth optimization of quantum-well-enhanced multijunction photovoltaics

S. Hubbard, S. Polly, D. Biswas, 2023, Cell Reports Physical Science.

Backend Processing and Through-Wafer Vias

D. Biswas, S. Tiku, 2016 .

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

Dhrubes Biswas, Subhra Chowdhury, D. Biswas, 2015 .

A Strategic Review Of Reduction Of Dislocation Density At The Heterogenious Junction Of Gan Epilayer On Foreign Substrate

S. Bhattacharyya, D. Biswas, P. Mukhopadhyay, 2011 .

Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique

D. Biswas, Saptarsi Ghosh, P. Mukhopadhyay, 2018 .

Growth Optimization of InGaP/GaAs Dual Junction Solar Cells With Quantum Wells and a Distributed Bragg Reflector

S. Hubbard, S. Polly, D. Biswas, 2022, SSRN Electronic Journal.

Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications

P. Chow, D. Biswas, S. Kabi, 2013 .

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

S. K. Jana, D. Biswas, Subhashis Das, 2018, IEEE Transactions on Electron Devices.

InGaP/InGaAs PHEMT with high IP3 for low noise applications

G. Huang, Chun-Yen Chang, Yueh-Chin Lin, 2004 .

Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation

B. Majlis, C. Dee, E. Chang, 2015 .

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .