J. Jang

发表

SIMS study on the improvement of electrical conductivity of a Si quantum dot layer by insertion of polycrystalline Si interlayers

H. Baek, Tae Woon Kim, J. Jang, 2014 .

In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices

Chang Soo Kim, S. Baik, Hyunung Yu, 2013, Nanotechnology.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Seung Mi Lee, K. Kim, J. Jang, 2012 .

A mutual calibration method to certify the thickness of nanometre oxide films

K. Kim, Jeong Won Kim, Yong-Sung Kim, 2008 .

Accurate determination of the surface normal for the reliable measurement of ultra-thin SiO2 thickness by x-ray photoelectron spectroscopy

K. Kim, D. Moon, J. Jang, 2006 .

Scintillation characterizations of Tl2LiLuCl6: Ce3+ single crystal

G. Rooh, H. Kim, Sunghwan Kim, 2016, 1607.08783.

Mechanism of abnormal interface artifacts in SIMS depth profiling of a Si/Ge multilayer by oxygen ions

K. Kim, Hee-jae Kang, J. Jang, 2014 .

A method to determine the interface position and layer thickness in SIMS depth profiling of multilayer films

K. Kim, Hee-jae Kang, D. Moon, 2010 .

In situ determination of the pore opening point during wet-chemical etching of the barrier layer of porous anodic aluminum oxide: nonuniform impurity distribution in anodic oxide.

Woo Lee, S. Baik, J. Jang, 2013, ACS applied materials & interfaces.

Quantitative analysis of Si 1-x Ge x alloy films by SIMS and XPS depth profiling using a reference material

K. Kim, A. Kim, J. Jang, 2018 .

SIMS depth profiling analysis of P‐doped n‐type Si layer to develop the Si QD solar cell

K. Kim, H. Baek, Tae Woon Kim, 2014 .

Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

D. Simons, C. Magee, K. Kim, 2017 .

Determination of interface locations and layer thicknesses in SIMS and AES depth profiling of Si/Ti multilayer films by 50 at% definition

K. Kim, Hee-jae Kang, J. Jang, 2014 .

Improved electrical properties of silicon quantum dot layers for photovoltaic applications

I. Baek, K. Kim, S. Lee, 2016 .

Quantitative analysis of Cu(In,Ga)Se2 thin films by secondary ion mass spectrometry using a total number counting method

Jeha Kim, Yong‐Duck Chung, Dae‐Hyung Cho, 2012 .

Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell

S. Choi, J. Song, J. Jang, 2011, Nanotechnology.

Band engineering of a Si quantum dot solar cell by modification of B-doping profile

K. Kim, S. Lee, Gyea Young Kwak, 2017 .

Accurate quantification of Cu(In,Ga)Se2 films by AES depth profiling analysis

Yong‐Duck Chung, K. Kim, Hee-jae Kang, 2013 .