R. Balboni

发表

Quantum effects in silicon for photovoltaic applications

P. Ingenhoven, Lorenzo Pavesi, Y. Jestin, 2013 .

Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

Ingrid De Wolf, Vincent Senez, G. Carnevale, 2003 .

Measuring the orbital angular momentum spectrum of an electron beam

R. Boyd, M. Lavery, M. Padgett, 2017, Nature Communications.

Measuring an electron beam's orbital angular momentum spectrum

R. Boyd, M. Lavery, M. Padgett, 2016, 1609.09129.

Towards a holographic approach to spherical aberration correction in scanning transmission electron microscopy.

E. Karimi, V. Grillo, Lei Jin, 2017, Optics express.

Structural analysis and depth profiling of nanometric SiO2/SRO multilayers

M. Bersani, L. Vanzetti, Y. Jestin, 2013 .

Computational ghost imaging for transmission electron microscopy

R. Bowman, M. Padgett, V. Grillo, 2022, 2204.09997.

Wavy growth onset in strain-balanced InGaAs multi-quantum wells

C. Ferrari, L. Lazzarini, L. Nasi, 2005 .

Strain Analysis in Submicron Electron Devices by Convergent Beam Electron Diffraction

A. G. Cullis, A. Benedetti, S. Frabboni, 2002 .

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

A. G. Cullis, A. Benedetti, S. Frabboni, 2003 .

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures

M. Capizzi, A. Polimeni, V. Grillo, 2012, 1410.2436.

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures

M. Capizzi, A. Polimeni, V. Grillo, 2012, 1410.2436.

Quantitative Thin-Film X-ray Microanalysis by STEM/HAADF: Statistical Analysis for Precision and Accuracy Determination

A. Armigliato, R. Balboni, R. Rosa, 2006, Microscopy and Microanalysis.

Evidence for molecular hydrogen in single crystal silicon

G. Cerofolini, G. Ottaviani, L. Meda, 1991 .

Strain field reconstruction in shallow trench isolation structures by CBED and LACBED

A. Spessot, S. Frabboni, A. Armigliato, 2006 .

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

S. Frabboni, A. Armigliato, R. Balboni, 2004 .

Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

G. Ottaviani, S. Frabboni, R. Tonini, 1998 .

Observation of nanoscale magnetic fields using twisted electron beams

R. Boyd, E. Karimi, V. Grillo, 2017, Nature Communications.

Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high‐order Laue zone line profiles

A. Spessot, S. Frabboni, A. Armigliato, 2007, Journal of microscopy.

Recrystallization of strained GexSi1–x/Si layers with various Ge gradients and in the presence of impurities

R. Tonini, R. Balboni, L. Vescan, 1994 .

Local epitaxy from the silicon substrate in silicon–rich SiC during Si–nanocrystals formation

E. Centurioni, R. Rizzoli, C. Summonte, 2017 .

On the Spatial Resolution in Analytical Electron Microscopy

M. Caymax, S. Frabboni, D. Howard, 1998 .

Hydrogen precipitation in highly oversaturated single‐crystalline silicon

G. Cerofolini, G. Ottaviani, Lorenzo Pavesi, 1995 .

Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns

S. Frabboni, Feng Wu, A. Armigliato, 1999 .

nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures

S. Frabboni, A. Armigliato, R. Balboni, 2005 .

Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures

A. Spessot, A. Benedetti, S. Frabboni, 2006 .

Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modeling

V. Senez, I. Wolf, A. Cedola, 2003 .

Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction

S. Frabboni, A. Armigliato, R. Balboni, 1998 .

Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction

A. Benedetti, J. Vanhellemont, S. Frabboni, 1997 .

Analytical electron microscopy of Si1−xGex/Si heterostructures and local isolation structures

F. Malvezzi, J. Vanhellemont, S. Frabboni, 1995 .

Determination of Bulk Mismatch Values in Heterostructures” by TEM/CBED

S. Frabboni, A. Armigliato, R. Balboni, 1995 .

Electron and ion beam analysis of composition and strain in Si-xGex/Si heterostructures

F. Romanato, S. Frabboni, A. Armigliato, 1994 .

Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry

F. Romanato, S. Iyer, M. Mazzer, 1992 .

Generation and application of bessel beams in electron microscopy.

Mark R. Dennis, R. Boyd, E. Karimi, 2015, Ultramicroscopy.

Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

E. Karimi, V. Grillo, E. Mafakheri, 2016, 1612.00654.

Transmission Electron Diffraction Techniques for Nm Scale Strain Measurement in Semiconductors

J. Vanhellemont, S. Frabboni, P. Smeys, 1995 .

CBED strain measurements in boron implanted silicon

S. Frabboni, R. Balboni, 1991 .

Theoretical and practical aspects of the design and production of synthetic holograms for transmission electron microscopy

E. Karimi, V. Grillo, G. Gazzadi, 2021, Journal of Applied Physics.

EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

R. Nipoti, S. Milita, R. Balboni, 1995 .

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

M. Fried, P. Petrik, A. Nassiopoulou, 2011 .

Challenging Point Scanning across Electron Microscopy and Optical Imaging using Computational Imaging

R. Bowman, G. Gibson, M. Padgett, 2022, Intelligent Computing.

ANALYSIS OF LOCALISED STRAINS IN CRYSTALS BY CONVERGENT BEAM ELECTRON DIFFRACTION

A. Benedetti, S. Frabboni, A. Armigliato, 2004 .

Stress State Determination in Nanoelectronic Silicon Devices Coupling COMSOL Multiphysics and a Recursive Dynamical CBED Pattern Simulation

A. Spessot, S. Frabboni, A. Armigliato, 2008 .

Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal

G. Ottaviani, L. Meda, G. Cerofolini, 1993 .

On the assessment of local stress distributions in integrated circuits

I. Wolf, J. Vanhellemont, S. Frabboni, 1993 .

LATTICE STRAIN AND STATIC DISORDER DETERMINATION IN SI/SI1-XGEX/SI HETEROSTRUCTURES BY CONVERGENT BEAM ELECTRON DIFFRACTION

S. Frabboni, A. Armigliato, R. Balboni, 1999 .

The problem of convolution in the simulation of multicrystal X-ray rocking curves of semiconductor materials

R. Balboni, M. Servidori, F. Cembali, 1994 .

Influence of Experimental Parameters on the Determination of Tetragonal Distortion in Heterostructures by LACBED

S. Frabboni, F. Corticelli, A. Armigliato, 1995 .

Application of the parametric bootstrap method to determine statistical errors in quantitative X‐ray microanalysis of thin films

A. Armigliato, R. Balboni, R. Rosa, 2007, Journal of microscopy.

Computational ghost imaging for transmission electron microscopy

ndrea, S. Frabboni, incenzo, 2022, 2204.09997.