V. Ivády

发表

Pressure and temperature dependence of the zero-field splitting in the ground state of NV centers in diamond: A first-principles study

J. Maze, Á. Gali, I. Abrikosov, 2014 .

A silicon carbide room-temperature single-photon source.

T. Ohshima, Á. Gali, B. Johnson, 2013, Nature materials.

A room temperature single photon source in silicon carbide

T. Umeda, S. Castelletto, T. Ohshima, 2013, CLEO: 2013.

Electrically and mechanically tunable electron spins in silicon carbide color centers.

D. Awschalom, Á. Gali, P. Klimov, 2013, Physical review letters.

High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC.

D. Awschalom, D. J. Christle, Á. Gali, 2016, Physical review letters.

Quantum Annealing Con nuous-variable quantum annealing with superconduc ng circuits

V. Ivády, 2018 .

First principles calculation of spin-related quantities for point defect qubit research

Á. Gali, I. Abrikosov, V. Ivády, 2018, npj Computational Materials.

Ab initio description of highly correlated states in defects for realizing quantum bits

Á. Gali, M. Bockstedte, V. Ivády, 2018, npj Quantum Materials.

Stabilization of point-defect spin qubits by quantum wells

N. T. Son, M. Holt, D. Awschalom, 2019, Nature Communications.

Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC

N. T. Son, T. Ohshima, Á. Gali, 2018, Materials Science Forum.

Decoherence of V\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$\end{document}B− spin d

A. Dréau, Á. Gali, G. Cassabois, 2021, Nature communications.

A. Dréau, Á. Gali, G. Cassabois, 2022, Nature Communications.

Exhaustive characterization of modified Si vacancies in 4H-SiC

I. Ivanov, R. Armiento, I. Abrikosov, 2022, Nanophotonics.

Coherent dynamics of multi-spin V\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$\end{d

Chuan-Feng Li, Wei Liu, Á. Gali, 2022, Nature Communications.

Optical Polarization of Nuclear Spins in Silicon Carbide.

D. Awschalom, D. J. Christle, Á. Gali, 2015, Physical review letters.

Chuan-Feng Li, Xiang-Dong Chen, Jin-Shi Xu, 2021, Nature Communications.

Exhaustive characterization of modified Si vacancies in 4H-SiC

I. Ivanov, R. Armiento, I. Abrikosov, 2022, Nanophotonics.

Ab initio description of highly correlated states in defects for realizing quantum bits

M. Bockstedte, V. Ivády, F. Schütz, 2018, npj Quantum Materials.

DMRG on Top of Plane-Wave Kohn-Sham Orbitals: A Case Study of Defected Boron Nitride.

M. Vörös, Á. Gali, L. Veis, 2020, Journal of chemical theory and computation.

Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride

Á. Gali, Gergely Barcza, Ö. Legeza, 2020, npj Computational Materials.

Decoherence of VB- spin defects in monoisotopic hexagonal boron nitride

A. Dréau, Á. Gali, B. Gil, 2022 .

Coherent dynamics of multi-spin V − B centers in hexagonal boron nitride

Chuan-Feng Li, Xiang-Dong Chen, Jian-Shun Tang, 2022 .

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations

E. Janzén, N. T. Son, Á. Gali, 2012 .

Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide

N. T. Son, I. Abrikosov, V. Ivády, 2023, Physical Review Applied.

Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin, and charge state initialization

F. Jelezko, M. Nesladek, G. Wachter, 2023, Physical Review Research.

Identification of divacancy and silicon vacancy qubits in 6H-SiC

N. T. Son, T. Ohshima, R. Armiento, 2019, Applied Physics Letters.

Development of theoretical approaches for post-silicon information processing

Viktor Ivády, V. Ivády, 2016 .

Hybrid-DFT + Vw method for band structure calculation of semiconducting transition metal compounds: the case of cerium dioxide

Á. Gali, I. Abrikosov, V. Ivády, 2017, Journal of physics. Condensed matter : an Institute of Physics journal.

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

M. Toth, I. Aharonovich, V. Ivády, 2023, Physical Review Applied.

Carbon defect qubit in two-dimensional WS2

Á. Gali, V. Ivády, G. Thiering, 2022, Nature Communications.

Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC

E. Janzén, Á. Gali, I. Abrikosov, 2014 .

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application

E. Janzén, Á. Gali, V. Ivády, 2014 .

Electrically driven optical interferometry with spins in silicon carbide

T. Ohshima, D. Awschalom, Á. Gali, 2019, Science Advances.

Stone–Wales defects in hexagonal boron nitride as ultraviolet emitters

Á. Gali, Z. Bodrog, V. Ivády, 2020, npj Computational Materials.

Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit

E. Janzén, Á. Gali, I. Abrikosov, 2015 .

B center in hexagonal boron nitride

Chuan-Feng Li, Xiang-Dong Chen, Jian-Shun Tang, 2023 .

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

E. Janzén, N. T. Son, Á. Gali, 2012 .

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide

V. Ivády, D. Dasari, Jawad Ul-Hassan, 2024, Physical Review Letters.

Symmetric carbon tetramers forming spin qubits in hexagonal boron nitride

Z. Benedek, Gergely Barcza, Ö. Legeza, 2023, npj Computational Materials.

First-principles computational methods for quantum defects in two-dimensional materials: A perspective

V. Ivády, H. Seo, Y. Ping, 2024, Applied Physics Letters.