B. Heying

D. Clarke, U. Mishra, J. Speck, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2001 .

HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2001 .

Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2000 .

Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition

X. H. Wu, S. Denbaars, U. Mishra, 1996 .

A Cool, Sub-0.2 dB, Ultra-Low Noise Gallium Nitride Multi-Octave MMIC LNA-PA with 2-Watt Output Power

W. Luo, M. Wojtowicz, B. Heying, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

E. Yu, J. Speck, B. Heying, 2001 .

Gallium nitride materials - progress, status, and potential roadblocks

Jaime A. Freitas, Robert F. Davis, James S. Speck, 2002, Proc. IEEE.

Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

S. Denbaars, P. Petroff, J. Speck, 2000 .

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

James S. Speck, Bernd Keller, Yongfang Li, 1996 .

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

James S. Speck, Henning Riechert, J. Speck, 2000 .

Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs

M. Wojtowicz, A. Oki, R. Coffie, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN

S. Denbaars, J. Speck, P. Fini, 2002 .

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1995 .

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2000 .

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

U. K. Mishra, J. S. Speck, S. Keller, 1995 .

Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

S. Denbaars, P. Petroff, S. Keller, 2000 .

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2002 .

Dislocation mediated surface morphology of GaN

James S. Speck, S. P. DenBaars, S. Denbaars, 1999 .

Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy.

J. Speck, B. Heying, J. Pelz, 2001, Physical review letters.

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Jenshan Lin, Mingqi Chen, W Sutton, 2010, IEEE Microwave and Wireless Components Letters.

Characterization of an AlGaN/GaN two-dimensional electron gas structure

S. Denbaars, P. Petroff, S. Keller, 2000 .

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

S. Denbaars, P. Petroff, U. Mishra, 1999 .

Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire

J. Speck, S. Keller, YiFeng Wu, 1996 .

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

U. Mishra, J. Speck, I. Smorchkova, 2002 .

Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy

S. Denbaars, S. Keller, U. Mishra, 2000 .

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

K.W. Kobayashi, I. Smorchkova, M. Wojtowicz, 2009, IEEE Journal of Solid-State Circuits.

Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance

Kevin W. Kobayashi, Aaron Oki, Ioulia Smorchkova, 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

Reliable GaN HEMTS for high frequency applications

Mike Wojtowicz, Wen-Ben Luo, Salah Din, 2010, 2010 IEEE MTT-S International Microwave Symposium.