C. Chen

发表

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer.

H. Kuo, T. Lu, F. Lai, 2015, Optics express.

Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching

S. Chang, Y. Su, J. Sheu, 2001 .

The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes

S. Chang, Y. Su, C. Chen, 2003, CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).

High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

S. Chang, P. Chang, Y. Su, 2006 .

On-chip GaN-based dual-color micro-LED arrays and their application in visible light communication.

H. Haas, M. Dawson, J. McKendry, 2019, Optics express.

InGaN/GaN tunnel-injection blue light-emitting diodes

T. Wen, S. Chang, Y. Su, 2002 .

Low-frequency noise properties of metal–organic–metal ultraviolet sensors

C. Chen, R. Chuang, P. Su, 2015 .

GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with Ir ∕ Pt Contact Electrodes

S. Chang, P. Chang, C. L. Yu, 2007 .

InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

S. Chang, Y. Su, C. Chen, 2004 .

Nitride-based LEDs with p-InGaN capping layer

S. Chang, P. Chang, Y. Su, 2003 .

High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

S. Chang, P. Chang, Y. Su, 2006 .

Quaternary AlInGaN photodetectors with MIS structure

S. Wang, S. Young, C. Chen, 2009, 2009 International Semiconductor Device Research Symposium.

Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate

Chun-Yen Chang, Po-Tsung Lee, C. Lin, 2014 .

Electro-ridge for large injection current of micro-size InGaN light emitting diode

B. J. Pong, Gou-Chung Chi, Cheng-Chien Chen, 2005, SPIE Optics + Photonics.

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Jinn-Kong Sheu, Yan-Kuin Su, Ten-Chin Wen, 2002 .

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir∕Pt contact electrodes

S. Chang, P. Chang, C. L. Yu, 2006 .

AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

Yan-Kuin Su, Shoou-Jinn Chang, S. Chang, 2004 .

High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

Y. Su, J. Sheu, Jone F. Chen, 2002 .

GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

C. H. Chen, P. C. Chang, S. J. Chang, 2006, Microelectron. J..

InGaN/GaN multiple‐quantum‐well dual‐wavelength near‐white light emitting diodes

S. Chang, Y. Su, C. Chen, 2003 .

Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

P. Chang, C. L. Yu, C. Chen, 2006 .

Nitride-based photodetectors with unactivated Mg-doped GaN cap layer

Y. X. Sun, S. Chang, P. Chang, 2008 .

Effects of thermal annealing on In-induced metastable defects in InGaN films

S. Chang, C. Chen, H. Hung, 2007 .