A. Hydes

发表

Parallel Arrays of Sub-10 nm Aligned Germanium Nanofins from an In Situ Metal Oxide Hardmask using Directed Self-Assembly of Block Copolymers

Anushka S. Gangnaik, M. Morris, Y. Georgiev, 2015 .

Is electronic spin angular momentum conserved in gas-surface interactions? F and F + with Si(100)

A. Hydes, D. Klemperer, D. Field, 1986 .

The use of Langmuir probes and optical emission spectroscopy to measure electron energy distribution functions in RF-generated argon plasmas

T. Cox, N. Braithwaite, V. Deshmukh, 1987 .

Spectroscopic studies of fluorescent emission in plasma etching of Si and SiO2 and the mechanism of gas-surface interactions

A. Hydes, D. Klemperer, D. Field, 1984 .

Spatially resolved optical spectroscopy of plasma etching systems

A. Hydes, D. Klemperer, D. Field, 1984 .

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

K. Hilton, M. Uren, P. Bhatnagar, 2007 .

Materials specification for MCM-D decoupling capacitors using PZ, PZT, PLZT and BST dielectrics

P. Kirby, R. Sethi, R. Wright, 1997 .

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

P. Hurley, J. Connolly, F. Crupi, 2018 .

AsH3 gas-phase ex situ doping 3D silicon structures

P. Hurley, G. Mirabelli, J. Connolly, 2018, Journal of Applied Physics.

Silicon Carbide Vertical JFET Operating at High Temperature

K. Hilton, M. Uren, C. M. Johnson, 2008 .

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

D. Floriot, T. Reveyrand, O. Drisse, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

GaN/AlGaN HFETs fabricated on a SiC substrate

B. T. Hughes, M. Uren, J. Birbeck, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Mass spectrometric studies of plasma etching of silicon nitride

A. Hydes, M. Seakins, D. Klemperer, 1985 .

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

A. O'Neill, K. Hilton, M. Uren, 2005 .

Role of interface and bulk traps on the capacitance–voltage characteristics of WS2/Al2O3/Si capacitors

P. Hurley, A. Di Bartolomeo, A. Blake, 2023, Solid-State Electronics.

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

A. J. Hydes, Anthony O'Neill, Konstantin Vassilevski, 2007 .

Spatially resolved optical spectroscopy of plasma etching systems

A. Hydes, D. Klemperer, D. Field, 1984 .

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

C. M. Johnson, A. O'Neill, K. Hilton, 2006 .