M. Kunzer

发表

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

O. Paul, P. Ruther, U. Schwarz, 2014 .

Influence of sample thickness and concentration of Ce dopant on the optical properties of YAG:Ce ceramic phosphors for white LEDs

I. Kinski, M. Kunzer, K. Waetzig, 2014 .

Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures

K. Köhler, J. Wagner, B. Johs, 2001 .

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

K. Köhler, J. Wagner, B. Johs, 1999 .

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

K. Köhler, J. Wagner, B. Johs, 1999 .

Line beam laser lift-off approach for sapphire removal

U. Schwarz, R. Delmdahl, R. Paetzel, 2012 .

InxGa1−xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN

C. Manz, M. Kunzer, A. Ramakrishnan, 1999 .

Self-compensation in Mg doped p-type GaN grown by MOCVD

M. Kunzer, K. Bachem, M. Maier, 1998 .

Resonant Raman scattering from buried AlxGa1−xN (x⩽0.17) layers in (Al, Ga, In)N heterostructures

J. Wagner, M. Kunzer, M. Maier, 2000 .

AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency

K. Forghani, L. Kirste, K. Köhler, 2012 .

Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition

U. Schwarz, J. Brunne, K. Köhler, 2013 .

Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells

K. Köhler, J. Wagner, B. Johs, 2000 .

Microstructural and optical emission properties of diamond multiply twinned particles

O. Ambacher, L. Kirste, V. Lebedev, 2020, 2004.13451.

First principle studies on molecular doping of ZnO thin films by As2O3

L. Kirste, M. Fiederle, M. Kunzer, 2012 .

AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques

W. Jost, K. Köhler, M. Kunzer, 1992 .

Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes

L. Kirste, K. Köhler, J. Wagner, 2010 .

Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

J. Wagner, N. Herres, M. Kunzer, 1999 .

Composition Dependence of the Band Gap Energy of InxGal-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

J. Wagner, N. Herres, M. Kunzer, 1998 .

Ultraviolet Pumped Tricolor Phosphor Blend White Emitting LEDs

Joachim Wagner, Michael Kunzer, Klaus Köhler, 2001 .

Iron Acceptors in Gallium Nitride (GaN)

H. Amano, I. Akasaki, B. Monemar, 1993 .

Determination of the GaN/AlN band offset via the (/0) acceptor level of iron

Michael Kunzer, Ulrich Kaufmann, K. Maier, 1994 .

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Michael Kunzer, P. Schlotter, M. Kunzer, 1999 .

Single Chip White LEDs

K. Köhler, J. Wagner, W. Pletschen, 2002 .

Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

Michael Kunzer, M. Maier, Ulrich Kaufmann, 1999 .

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

L. Kirste, K. Köhler, J. Wagner, 2014 .

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

Michael Kunzer, M. Maier, P. Schlotter, 1998 .

Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3

H. Amano, I. Akasaki, B. Šantić, 1997 .

Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors

L. Kirste, P. Waltereit, S. Müller, 2008 .

Free and bound excitons in thin wurtzite GaN layers on sapphire

H. Amano, I. Akasaki, M. Kunzer, 1996 .

Group III-Nitride heterostructures: From materials research to devices

K. Köhler, J. Wagner, R. Kiefer, 2000 .

Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

O. Ambacher, K. Köhler, W. Schirmacher, 2007 .

Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al2O3 Grown by MOCVD

I. Akasaki, M. Kunzer, U. Kaufmann, 1995 .

Photoluminescence of residual transition metal impurities in GaN

H. Amano, K. Hiramatsu, I. Akasaki, 1995 .

Near‐UV to violet LEDs – Wavelength dependence of efficiency limiting processes

K. Köhler, J. Wagner, M. Kunzer, 2007 .

Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques

M. Kunzer, J. Schneider, J. Baur, 1997 .

Band anticrossing in diluted AlxGa1−xAs1−yNy (x⩽0.37,y⩽0.04)

S. Procz, K. Köhler, J. Wagner, 2008 .

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

Joachim Wagner, Michael Kunzer, Klaus Köhler, 2009 .

Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

H. Amano, K. Hiramatsu, I. Akasaki, 1994 .

Spectroscopic ellipsometry characterization of (InGa)N on GaN

J. Wagner, M. Kunzer, K. Bachem, 1998 .

Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Christoph E. Nebel, Michael Kunzer, Satoshi Yamasaki, 2013 .

Control of the mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency

Michael Kunzer, Klaus Köhler, M. Maier, 2005 .

Deep donor state of vanadium in cubic silicon carbide (3C‐SiC)

Michael G. Spencer, Michael Kunzer, V. B. Shields, 1994 .

GaN doped with beryllium—An effective light converter for white light emitting diodes

M. Boćkowski, U. Schwarz, B. Damilano, 2013 .

High voltage GaN-based Schottky diodes in non-isolated LED buck converters

O. Ambacher, R. Quay, J. Wagner, 2016, 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe).

Line beam processing for laser lift‐off of GaN from sapphire

Ulrich T. Schwarz, Michael Kunzer, Rüdiger Moser, 2012 .

Oxidation behaviour of carbon monoxide at the photostimulated surface of ZnO nanowires

M. Zacharias, K. Köhler, V. Cimalla, 2011 .

Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

J. Wagner, N. Herres, M. Kunzer, 1999 .

Chemically-assisted ion-beam etching of (AIGa)As/GaAa: Lattice damage and removal by in-situ Cl 2 treatment

C. Manz, R. Kiefer, J. Daleiden-, 1999 .

Optical Absorption and Zeeman Study of 6H-SiC:Cr

M. Kunzer, P. Baranov, A. Dörnen, 1997 .

Photoluminescence of Fe-complexes in GaN

B. Meyer, R. Heitz, M. Kunzer, 1996 .

Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

K. Kohler, T. Moudakir, M. Kunzer, 2013, IEEE Photonics Journal.

Mg doping profile in III–N light emitting diodes in close proximity to the active region

K. Köhler, J. Wagner, J. Wiegert, 2006 .

Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes

U. Schwarz, K. Köhler, J. Wagner, 2013 .

Magnetic circular dichroism and electron spin resonance of the A− acceptor state of vanadium, V3+, in 6H-SiC

M. Kunzer, J. Schneider, U. Kaufmann, 1995 .

Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs

J. Wagner, M. Maier, M. Kunzer, 2010, OPTO.

Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance

H. Amano, I. Akasaki, M. Kunzer, 1997 .

Group III-nitride based blue emitters

M. Seelmann-Eggebert, J. Wagner, M. Kunzer, 1999 .