Hervé Morel

Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling

Cyril Buttay, Wissam Sabbah, Faical Arabi, 2017, Microelectron. Reliab..

An advanced VHDL‐AMS PiN diode model: towards simulation‐based design of power converters

Tarek Ben Salah, Hervé Morel, Sameh Mtimet, 2015 .

An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module

Bruno Allard, Pascal Bevilacqua, Hubert Razik, 2017, 2017 IEEE International Electric Machines and Drives Conference (IEMDC).

Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, 2018, 2018 IEEE International Conference on Industrial Technology (ICIT).

On the extraction of the design parameters of power BJTs

Kamel Besbes, Atef Jedidi, Hatem Garrab, 2017, 2017 International Conference on Control, Automation and Diagnosis (ICCAD).

A physically based diode model for circuit simulation

Tarek Ben Salah, Hervé Morel, Sofiane Khachroumi, 2013 .

A complete switching cell model for fine power devices simulation

Hervé Morel, Sameh Mtimet, Tarek Ben Salah, 2017, 2017 International Conference on Green Energy Conversion Systems (GECS).

Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes

Kaiçar Ammous, Anis Ammous, Hervé Morel, 2007 .

Benefits of GaN transistors and embedding in PCB laminates

Cyril Buttay, Pascal Bevilacqua, Bruno Allard, 2019 .

An exprimental procedure to extract the tq parameter of thyristors

Atef Jedidi, Hatem Garrab, Hervé Morel, 2017, 2017 International Conference on Engineering & MIS (ICEMIS).

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Dominique Planson, Alberto Castellazzi, Oriol Avino-Salvado, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).