S. Deane

发表

Integrated systems for rapid point of care (PoC) blood cell analysis.

H. Morgan, N. Green, Veronica Hollis, 2011, Lab on a chip.

Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon

M. J. Powell, R. Wehrspohn, S. Deane, 2002 .

Thin‐film‐transistor‐ and diode‐addressed AMLCDs on polymer substrates

M. J. Edwards, D. J. McCulloch, Nigel D. Young, 1997 .

Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors

Ralf B. Wehrspohn, Steven C. Deane, M. J. Powell, 1998 .

Urbach energy dependence of the stability in amorphous silicon thin-film transistors

M. J. Powell, R. Wehrspohn, R. Brüggemann, 1999 .

Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model

M. J. Powell, R. Wehrspohn, S. Deane, 2000 .

A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators

M.M. De Souza, N. Young, M. M. De Souza, 2008, IEEE Transactions on Electron Devices.

Dangling-bond defect state creation in microcrystalline silicon thin-film transistors

M. J. Powell, R. Wehrspohn, P. Cabarrocas, 2000 .

Kinetics of defect creation in amorphous silicon thin film transistors

Ralf B. Wehrspohn, Steven C. Deane, M. J. Powell, 2003 .

Stability of plasma deposited thin film transistors comparison of amorphous and microcrystalline silicon

M. J. Powell, R. Wehrspohn, S. Deane, 2001 .

Stability of Amorphous Silicon Thin Film Transistors

M. J. Powell, R. Wehrspohn, S. Deane, 1999 .

Current induced drift mechanism in amorphous SiNx:H thin film diodes

John Martin Shannon, Steven C. Deane, B. McGarvey, 1994 .

Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors

William I. Milne, M. J. Powell, W. Milne, 1992 .

Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool

M. J. Powell, S. Deane, C. V. Berkel, 1991 .

Reduction of Threshold Voltage Shift by Bias Annealing of Hydrogenated Amorphous Silicon Thin Film Transistors

M. J. Powell, W. Milne, S. Deane, 1991 .

Thermal bias annealing evidence for the defect pool in amorphous silicon thin-film transistors

J. R. Hughes, M. J. Powell, W. Milne, 1990 .

Physics of a-Si:H switching diodes

M. J. Powell, S. Deane, C. V. Berkel, 1993 .

Below threshold conduction in a‐Si:H thin film transistors with and without a silicon nitride passivating layer

M. Shur, S. Deane, M. Hack, 1996 .

Photoenhanced CVD of hydrogenated amorphous silicon using an internal hydrogen discharge lamp

W. Milne, S. Deane, F. Clough, 1989 .

The kinetics of removal of defects in a-Si:H TFTs made with PECVD oxide gate insulator material

M. J. Powell, W. Milne, S. Deane, 1994 .

Local hydrogen reactions of H2* in a-Si:H

C. W. Chen, M. J. Powell, J. Robertson, 1998 .

The Effect of the Amorphous Silicon Alpha-Gamma Transition on Thin Film Transistor Performance

M. J. Powell, S. Deane, I. French, 1997 .

The effect of hydrogen dilution on the aminosilane plasma regime used to deposit nitrogen-rich amorphous silicon nitride

S. Deane, R. Gibson, I. French, 1996 .

Defect creation kinetics in amorphous silicon thin film transistors

M. J. Powell, R. Wehrspohn, S. Deane, 2002 .

Hydrogen density of states and defects densities in a-Si:H

M. J. Powell, J. Robertson, S. Deane, 1996 .

Defect-pool model parameters for amorphous silicon derived from field-effect measurements

M. J. Powell, S. Deane, 1993 .

A Unified Description of the Density of States for Hydrogen and Electrons in Amorphous Silicon

M. J. Powell, S. Deane, 1994 .

A defect-pool model for near-interface states in amorphous silicon thin-film transistors

J. R. Hughes, M. J. Powell, W. Milne, 1991 .

Field‐effect conductance in amorphous silicon thin‐film transistors with a defect pool density of states

Steven C. Deane, M. J. Powell, S. Deane, 1993 .

The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics

M. J. Powell, W. Milne, S. Deane, 1993 .

Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

M. J. Powell, J. Robertson, R. Wehrspohn, 2000 .

Equilibration in amorphous silicon nitride alloys

M. J. Powell, D. Jones, S. Deane, 1996 .

Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon

M. J. Powell, R. Wehrspohn, S. Deane, 2002 .

Microscopic Model for Creation And Removal of Metastable Dangling Bonds in a-Si:H

M. J. Powell, R. Wehrspohn, S. Deane, 2002 .

Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon

M. Sweet, N. Young, D. Green, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Optical Feedback for AMOLED Pixel Circuits

Herbert Lifka, Andrea Giraldo, David A. Fish, 2006 .

38.1: Optical Feedback for AMOLED Display Compensation using LTPS and a‐Si:H Technologies

Herbert Lifka, Andrea Giraldo, David A. Fish, 2005 .

Physics of Below Threshold Current Distribution in a-Si:H TFTs

M. Shur, S. Deane, M. Hack, 1996 .

Rugged Thin Film Diode Liquid Crystal Switches Based on Amorphous Sin x :H

J. N. Sandoe, J. Clegg, J. Shannon, 1997 .