S. Sugou

Large gain-bandwidth-product, low dark-current InAlAs/InAlGaAs quaternary-well superlattice avalanche photodiodes

I. Watanabe, S. Sugou, H. Ishikawa, 1993 .

High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

S. Sugou, K. Makita, K. Taguchi, 1993, IEEE Photonics Technology Letters.

Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs

K. Kurihara, S. Sugou, K. Nishi, 2001, Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557).

Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding

S. Sugou, Keiichi Tokutome, Kazuo Mori, 1995 .

High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers

S. Sugou, K. Tokutome, T. Anan, 1999, IEEE Photonics Technology Letters.

Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

S. Sugou, Hideaki Saito, Kenichi Nishi, 2001 .

Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

S. Kumashiro, Kenichi Kasahara, S. Sugou, 1989 .

Low chirp operation in 1.6 /spl mu/m quantum dot laser under 2.5 GHz direct modulation

S. Sugou, Hideaki Saito, K. Nishi, 2001 .

Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates

Kaori Kurihara, S. Sugou, Takayoshi Anan, 2000 .

Direct bonding of high quality InP on Si and its application to optoelectronic devices

S. Sugou, K. Tokutome, K. Mori, 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.

Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates

S. Sugou, K. Nishi, K. Tokutome, 2000, IEEE Photonics Technology Letters.