Takayoshi Anan

Large gain-bandwidth-product, low dark-current InAlAs/InAlGaAs quaternary-well superlattice avalanche photodiodes

I. Watanabe, S. Sugou, H. Ishikawa, 1993 .

High Speed 1.1-µm-Range InGaAs-Based VCSELs

Takayoshi Anan, Masayoshi Tsuji, Kenichiro Yashiki, 2009, IEICE Trans. Electron..

Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs

Takayoshi Anan, Masayoshi Tsuji, Hiroshi Hatakeyama, 2009, OPTO.

25 Gbit/s operation of InGaAs-based VCSELs

Takayoshi Anan, Kenichiro Yashiki, Hiroshi Hatakeyama, 2006 .

25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs

Takayoshi Anan, Masayoshi Tsuji, Kenichiro Yashiki, 2009 .

First 8*8 semiconductor optical matrix switches using GaAs/AlGaAs electro-optic guided-wave directional couplers

Ikuo Mito, Kiichi Hamamoto, Mitsunori Sugimoto, 1992 .

Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates

Kaori Kurihara, S. Sugou, Takayoshi Anan, 2000 .

Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

Hiroyuki Yokoyama, Erich P. Ippen, Takayoshi Anan, 1990 .