C. Donolato

发表

Analytical and numerical inversion of the Laplace–Carson transform by a differential method

C. Donolato, 2002 .

A reciprocity theorem for charge collection

C. Donolato, 1985 .

Contrast and resolution of SEM charge‐collection images of dislocations

C. Donolato, 1979 .

Computer simulation of SEM electron beam induced current images of dislocations and stacking faults

C. Donolato, H. Klann, 1980 .

Quantitative Properties of SEM-EBIC Images of Stacking Faults in Silicon

C. Donolato, 1980 .

Influence of chlorine implantation on phosphorus diffusivity and oxidation-induced defects in silicon

S. Solmi, M. Kittler, A. Armigliato, 1985 .

On the analysis of diffusion length measurements by SEM

C. Donolato, 1982 .

Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes

G. Verzellesi, R. Nipoti, A. Cavallini, 2001 .

Identification of the free boundary of a space-charge region with the aid of a Laplacian potential

C. Donolato, 2006 .

Structure of the compounds Ag4Sc, Ag2Sc, Au4Sc, Au2Sc, and Ag3Yb

C. Donolato, S. Steeb, H. Reule, 1971 .

A note on the spatial resolution of cathodoluminescence images

C. Donolato, 1994 .

MODELING THE EBIC MEASUREMENTS OF DIFFUSION LENGTHS AND THE RECOMBINATION CONTRAST AT EXTENDED DEFECTS

C. Donolato, 1989 .

Analysis of charge-collection efficiency measurements in Schottky diodes

C. Donolato, 1988 .

Approximate evaluation of capacitances by means of Green’s reciprocal theorem

C. Donolato, 1996 .

Reconstruction of the charge collection probability in a solar cell from internal quantum efficiency measurements

C. Donolato, C. Donolato, 2001 .

Reconstruction of the charge collection probability in a semiconductor device from the derivative of collection efficiency data

C. Donolato, 1999 .

Reconstruction of the charge collection probability in a semiconductor diode from collection efficiency measurements by the regularization method

C. Donolato, 1991 .

Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor

C. Donolato, C. Donolato, 1998 .

Influence of hydrogen content on the relaxation spectrum of α titanium

G. G. Bentini, C. Donolato, P. Strocchi, 1968 .

A reply to the “comment” by F. Povolo on “the influence of H content on the relaxation spectrum of α titanium”

G. G. Bentini, C. Donolato, P. Strocchi, 1969 .

Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effects

G. G. Bentini, L. Correra, C. Donolato, 1984 .

Images of grain boundaries in polycrystalline silicon solar cells by electron and ion beam induced charge collection

R. Nipoti, C. Donolato, P. Rossi, 1996 .

An alternative proof of the generalized reciprocity theorem for charge collection

C. Donolato, C. Donolato, 1989 .

An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collection

C. Donolato, 1981 .

The statics of the wedge-shaped jar opener

C. Donolato, 2015 .

Disk in a groove with friction: An analysis of static equilibrium and indeterminacy

C. Donolato, 2018 .

Approximate analytical solution to the space charge problem in nanosized Schottky diodes

C. Donolato, C. Donolato, 2004 .

Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells

C. Donolato, 1983 .

The Maximum Charge-Collection Contrast of a Spherical Defect or a Surface-Parallel Dislocation

C. Donolato, 1993 .

A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity

C. Donolato, 1992 .

Evaluation of diffusion lengths and surface recombination velocities from electron beam induced current scans

C. Donolato, 1983 .

Structure of the compounds Au3Eu, Au3Tb, Au3Tm and also of Ag3Tb and Ag3Tm

C. Donolato, S. Steeb, 1969 .

Structural Techniques for Bulk Defects Characterization

C. Donolato, 1982 .

Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Current

C. Donolato, 1989 .

An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers. II. EBIC images of dislocations

C. Donolato, 1981 .

Spatial resolution of SEM-EBIC images

C. Donolato, 1979 .

International Workshop on Beam Injection Assessment of Defects in Semiconductors Held in Meudon-Bellevue (France) on 18-20 July 1988

O. Breitenstein, A. Laugier, M. Kittler, 1989 .

The free-boundary problem for space-charge regions around conductors: application of the hodograph method

C. Donolato, 2008 .

A minimum principle for the space charge region around a conductor within the depletion approximation

C. Donolato, 2006 .

Application of Green's differential equation to the analysis of ion-matrix sheaths around wedge-shaped cathodes

C. Donolato, 2005 .

An extension of Thomson's theorem and its application for determining induced charge densities

C. Donolato, 2003 .

Electrostatic problem of a point charge in the presence of a semi‐infinite semiconductor

C. Donolato, C. Donolato, 1995 .

The space-charge region around a metallic platelet in a semiconductor

C. Donolato, 1993 .

Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

P. Venturi, C. Donolato, C. Donolato, 1982, October 16.

Voronoi network modelling of multicrystalline silicon solar cells

C. Donolato, 2000 .

Characterization of grain boundaries in polycrystalline solar cells using a computerized electron beam induced current system

R. Bell, C. Donolato, 1983 .

Characterization of Microplasma Sites in Silicon n+‐p Junctions

C. Donolato, I. Vecchi, P. Merli, 1977 .

Effective Diffusion Length of Multicrystalline Solar Cells

C. Donolato, 1998 .

A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation

C. Donolato, C. Donolato, 1984, IEEE Transactions on Electron Devices.

Reciprocity theorem for charge collection by a surface with finite collection velocity: Application to grain boundaries

C. Donolato, 1994 .

Comment on ‘‘Determination of minority‐carrier lifetime and surface recombination velocity by optical‐beam‐induced‐current measurements at different light wavelengths’’ [J. Appl. Phys. 66, 3060 (1989)]

C. Donolato, 1990 .

The Legnaro ion microprobe in low current experiments

M. Viviani, R. Nipoti, C. Donolato, 1997 .

Avalanche multiplication of electron beam generated carriers in a silicon p-n junction

C. Donolato, 1977 .

Modeling electrostatic scanning force microscopy of semiconductors

C. Donolato, 1996 .

Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current

M. Kittler, C. Donolato, 1988 .

Charge collection in a Schottky diode as a mixed boundary-value problem

C. Donolato, 1985 .

Comment on ‘‘A contribution to the theory of beam‐induced current characterization of dislocations’’ [J. Appl. Phys. 69, 6387 (1991)]

C. Donolato, 1991 .

Structures of the compounds Au3La, Au3Ce, Au3Pr, Au3Nd, and of Ag3Pr, and Ag3Nd

C. Donolato, S. Steeb, 1969 .

Simulation of pulse height spectra in ion beam induced charge microscopy of polycrystalline silicon

R. Nipoti, C. Donolato, 1997 .

Analytical approximation to the capacitance of the microstrip disk capacitor

C. Donolato, 1996 .

Comments, with reply, on "A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors" by C.A. Dimitriadis

C. Donolato, 1993 .

QUANTITATIVE EVALUATION OF THE EBIC CONTRAST OF DlSLOCATIONS

C. Donolato, 1983 .

Beam Induced Current Characterization in Polycrystalline Semiconductors

C. Donolato, 1985 .