Mehrzad Karamimanesh

A Write Bit-Line Free Sub-threshold SRAM Cell with Fully Half-Select Free Feature and High Reliability for Ultra-Low Power Applications

E. Abiri, Mehrzad Karamimanesh, Kourosh Hassanli, 2021, AEU - International Journal of Electronics and Communications.

A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology

Ebrahim Abiri, Mohammad Reza Salehi, Abdolreza Darabi, 2021, Microelectron. J..

A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology

M. Gholipour, M. Sahid, Mehrzad Karamimanesh, 2022, Circuits, Systems, and Signal Processing.