V. Lam

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

S. Le, T. Zhong, R. Tong, 2014 .

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, S. Le, C. Park, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR

S. Le, T. Zhong, R. Tong, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

S. Le, Paul Liu, T. Zhong, 2019, Scientific Reports.

STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes

S. Le, T. Zhong, R. Tong, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

Tom Zhong, Terry Torng, Luc Thomas, 2016, 2016 IEEE Symposium on VLSI Technology.

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Tom Zhong, Terry Torng, Guenole Jan, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Tom Zhong, Terry Torng, Luc Thomas, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array

W. J. Gallagher, T. Torng, J. DeBrosse, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications

Tom Zhong, Yi Yang, Vignesh Sundar, 2018, 2018 IEEE Symposium on VLSI Technology.

Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

S. Le, T. Zhong, R. Tong, 2017, IEEE International Magnetics Conference.