Z. Teng

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, S. Le, C. Park, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR

S. Le, T. Zhong, R. Tong, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

S. Le, Paul Liu, T. Zhong, 2019, Scientific Reports.

STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes

S. Le, T. Zhong, R. Tong, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Tom Zhong, Terry Torng, Guenole Jan, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications

Tom Zhong, Yi Yang, Vignesh Sundar, 2018, 2018 IEEE Symposium on VLSI Technology.