D. Metzler

发表

Atomic Layer Etching at the Tipping Point: An Overview

G. Oehrlein, D. Metzler, Chen Li, 2015 .

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma.

Chen Li, G. Oehrlein, D. Metzler, 2014, Journal of vacuum science & technology. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society.

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

N. Fuller, S. Engelmann, R. Bruce, 2011 .

Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching

E. Joseph, M. Nakamura, S. Engelmann, 2015 .

Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching

E. Vogli, G. Oehrlein, D. Metzler, 2013 .

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

Chen Li, E. Joseph, S. Engelmann, 2017, The Journal of chemical physics.

Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

G. Oehrlein, D. Metzler, Chen Li, 2017 .

He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching

S. Engelmann, R. Bruce, G. Oehrlein, 2016 .

High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching

D. Metzler, 2016 .

Controlling Asymmetric Photoresist Feature Dimensions during Plasma‐Assisted Shrink

T. Lii, G. Oehrlein, D. Metzler, 2014 .

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, 2016 .

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Robert L. Bruce, Sebastian Engelmann, Sandra C. Hernández, 2015 .

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

E. Joseph, S. Engelmann, R. Bruce, 2020 .

Simulation of γ′ Precipitation Kinetics in a Commercial Ni-Base Superalloy

D. Metzler, M. Fahrmann, 2016 .

Abnormal Grain Growth in the Presence of Grain Boundary Pinning Precipitates

D. Metzler, M. Fahrmann, 2020 .

Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors

E. Joseph, S. Engelmann, R. Bruce, 2018, Journal of Vacuum Science & Technology A.

A Gleeble®-based Method for Ranking the Strain-Age Cracking Susceptibility of Ni-Based Superalloys

D. Metzler, 2008 .

A 14 nm Embedded STT-MRAM CMOS Technology

T. Standaert, D. Edelstein, R. Johnson, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

G. Oehrlein, D. Metzler, Chen Li, 2016 .

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

G. Oehrlein, D. Metzler, Chen Li, 2016 .

Application of cyclic fluorocarbon/argon discharges to device patterning

E. Joseph, Yu Zhu, S. Engelmann, 2016 .

Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist

E. Joseph, S. Engelmann, R. Bruce, 2020 .

An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines

E. T. Ryan, S. Wright, J. Demarest, 2019, AIP Advances.

Introduction of pre-etch deposition techniques in EUV patterning

John Arnold, Lei Sun, Dominik Metzler, 2018, Advanced Lithography.