J. Kopanski

发表

Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles

J. Marchiando, J. Kopanski, B. Rennex, 2002 .

Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

Jeremiah R. Lowney, Joseph J. Kopanski, Jay F. Marchiando, 1995 .

Silicon nanowire on oxide/nitride/oxide for memory application

Dimitris E. Ioannou, John S. Suehle, Joseph J. Kopanski, 2007 .

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

J. Marchiando, J. Lowney, J. Kopanski, 1997 .

Subsurface imaging of metal lines embedded in a dielectric with a scanning microwave microscope

Y. Obeng, J. Kopanski, L. You, 2016 .

Boron-implanted 6H-SiC diodes

M. Ghezzo, J. Kretchmer, Dale M. Brown, 1993 .

Review of semiconductor microelectronic test structures with applications to infrared detector materials and processes

C. E. Schuster, J. Kopanski, 1993 .

Scanning Probe Microscopes for Subsurface Imaging

Emily Hitz, Y. Obeng, J. Kopanski, 2014 .

Electrical scanning probe microscopes to address industrial nano-metrology needs of integrated circuits and nanoelectronic devices

J. Kopanski, 2014, 29th Conference on Precision Electromagnetic Measurements (CPEM 2014).

Metrology for nanosystems and nanoelectronics reliability assessments

C. Okoro, Y. Obeng, J. Kopanski, 2012, 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO).

Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement

W. Chim, J. Kopanski, Y.D. Hong, 2004, IEEE Transactions on Electron Devices.

Behavior of inversion layers in 3C silicon carbide

C. Fung, J. Kopanski, R. Ávila, 1986 .

Semiconductor Dopant Profile and Dielectric Characterization with Scanning Capacitance Microscopy

J. Kopanski, 2004 .

Real-Time Pseudodielectric Function of Low-Temperature-Grown GaAs

J. Guyer, J. Pellegrino, D. Gajewski, 2000 .

Probe assisted localized doping of aluminum into silicon substrates

S. Solares, Y. Obeng, J. Kopanski, 2019, Journal of Applied Physics.

Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

J. Suehle, E. Vogel, N. Nguyen, 2006 .

Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of p–n junctions

J. Marchiando, J. Kopanski, B. Rennex, 2000 .

MODELS FOR INTERPRETING SCANNING CAPACITANCE MICROSCOPE MEASUREMENTS

J. Marchiando, J. Lowney, J. Kopanski, 1998 .

Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon

C. Fung, J. Kopanski, 1984 .

Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts.

Y. Obeng, D. Gundlach, C. Richter, 2014, ACS applied materials & interfaces.

High spatial resolution mapping of resistivity variations in semiconductors

D. Novotny, J. Lowney, J. Kopanski, 1992 .

Specific contact resistivity of metal-semiconductor contacts-a new, accurate method linked to spreading resistance

D. Novotny, J. Kopanski, R. A. Forman, 1988 .

Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

D. Adderton, A. Erickson, L. Sadwick, 1996 .

Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data

Joseph J. Kopanski, Jay F. Marchiando, J. Marchiando, 2002 .

On calculating scanning capacitance microscopy data for a dopant profile in semiconductors

J. Marchiando, J. Kopanski, 2004 .

Towards reproducible scanning capacitance microscope image interpretation

J. Marchiando, D. Simons, Q. Chau, 2004 .

Characterization of two‐dimensional dopant profiles: Status and review

David G. Seiler, Alain C. Diebold, Joseph J. Kopanski, 1995 .

Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions

Joseph J. Kopanski, H. E. Smith, D. W. Berning, 1998 .

Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

J. Kopanski, L. Robins, Seong-eun Park, 2004 .

Die-Level Micrometers-Deep Subsurface Imaging for Fault Isolation using Remote Bias Induced Electrostatic Force Microscopy

Y. Obeng, E. Strelcov, J. Kopanski, 2022, International Symposium for Testing and Failure Analysis.

Electromagnetic field test structure chip for back end of the line metrology

Emily Hitz, Y. Obeng, J. Kopanski, 2015, Proceedings of the 2015 International Conference on Microelectronic Test Structures.

Gate oxide formation under mild conditions for scanning capacitance microscopy

Barbara J. Belzer, J. Kopanski, D. McBride, 2001 .

Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments

D. Thomson, W. Vandervorst, P. Wolf, 1998 .

PSPICE analysis of a scanning capacitance microscope sensor

J. Kopanski, G. Buh, C. Tran, 2004 .

Capacitive Probe Microscopy

J. Kopanski, 2002 .

Model database for determining dopant profiles from scanning capacitance microscope measurements

J. Marchiando, J. Lowney, J. Kopanski, 1998 .

Calibrated nanoscale dopant profiling using a scanning microwave microscope

Christian Rankl, Pavel Kabos, Joseph J. Kopanski, 2012 .

Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope

J. Marchiando, A. G. Birdwell, J. Kopanski, 2003 .

Invited) Scanning Probe Microscopes for Subsurface Imaging

Emily Hitz, Y. Obeng, J. Kopanski, 2014 .

Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

Sang-Mo Koo, Qiliang Li, J. Suehle, 2007, IEEE Transactions on Nanotechnology.

Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

Joseph J. Kopanski, J. Kopanski, G. Buh, 2003 .

Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures

D. Adderton, A. Erickson, C. Williams, 1996 .

SnTe Field Effect Transistors and the Anomalous Electrical Response of Structural Phase Transition

C. Richter, Qiliang Li, E. Zhao, 2014 .

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

M. V. Rao, S. Sundaresan, J. Kopanski, 2007 .

Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy

Marek E. Bialkowski, J. Yang, Adam Postula, 2005, Microelectron. Reliab..

Charge Trapping in Cubic Silicon Carbide MIS Capacitors

J. Kopanski, 1992 .

(Invited) Towards the Physical Reliability of 3D-Integrated Systems: Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems

D. Veksler, C. Okoro, Y. Obeng, 2022, ECS Transactions.

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits.

Lin You, Jung-Joon Ahn, Yaw Obeng, 2015, ECS transactions.

Deterministic Tagging Technology for Device Authentication

Yaw S. Obeng, Joseph J. Kopanski, Jungjoon Ahn, 2021, 2021 International Conference on IC Design and Technology (ICICDT).

Intermittent-contact scanning capacitance microscope for lithographic overlay measurement

J. Kopanski, S. Mayo, 1998 .

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

J. Suehle, K. Cheung, J. Ryan, 2011 .

A new interface defect spectroscopy method

J. Suehle, K. Cheung, J. Campbell, 2011, 2011 International Reliability Physics Symposium.