A. Evans

发表

Piezoresistance in polysilicon and its applications to strain gauges

P. French, A. Evans, Paddy J. French, 1989 .

Electron drift velocity in n-GaAs at high electric fields

Peter A. Houston, P. Houston, A. Evans, 1977 .

Drift mobility measurements in thin epitaxial semiconductor layers using time-of-flight techniques

P. Robson, A. Evans, 1974 .

New time-of-flight technique for measuring drift velocity in semiconductors

P. Robson, A. Evans, M. Stubbs, 1972 .

Saturation velocity of electrons in GaAs

P. Houston, A. Evans, 1976, IEEE Transactions on Electron Devices.

Polycrystalline Silicon Strain Sensors

Patrick J. French, P. French, A. Evans, 1985 .

Electron velocity in n GaAs at high electric fields

P. Houston, A. Evans, 1974 .

Microwave emission from InSb-NiSb eutectic

A. Evans, D. Walsh, 1968 .

Piezoresistance in polysilicon

Patrick J. French, A. Evans, A G R Evans, 1984 .

Investigation of the injection velocity of holes in strained Si pMOSFETs

G. Nicholas, T. Whall, E. Parker, 2005 .

Polycrystalline silicon as a strain gauge material

Patrick J. French, P. French, A. Evans, 1986 .

CMOS 1/f noise: n-channel versus p-channel

A. Evans, A. Evans, D. C. Murray, 1990 .