L. Palmateer

发表

Microwave characterisation of 1 μm-gate AI 0.48 In 0.52 As/Ga 0.47 In 0.53 As/InP MODFETs

P. Tasker, T. Itoh, L. Eastman, 1987 .

dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors

P. Tasker, L. Eastman, W. Schaff, 1989 .

Hydrogenated amorphous silicon germanium black‐matrix material for active‐matrix liquid‐crystal displays

H. Klauk, T. Jackson, S. Wright, 1997 .

Resonant tunneling diodes as sources for millimeter and submillimeter wavelengths

J. Nagle, P. Mounaix, P. Encrenaz, 1993 .

Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

Paul J. Tasker, William J. Schaff, L. D. Nguyen, 1988 .

Frequency multiplication using resonant tunnelling diode with output at submillimetre wavelengths

R. Bouregba, D. Lippens, L. Palmateer, 1990 .

N 9 3-2 7 7 7 2 RESONANT TUNNELING DIODES AS SOURCES FOR MILLIMETER AND SUBMILLIMETER WAVELENGTHS

J. Nagle, P. Mounaix, P. Encrenaz, 2008 .