E. Mizuki

Highly reliable InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology (COMET)

H. Miyamoto, M. Kuzuhara, N. Samoto, 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer

A. Wakejima, H. Miyamoto, Y. Ando, 1996 .

InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layer

A. Wakejima, K. Onda, M. Kanamori, 1998, IEEE Electron Device Letters.

Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing

A. Wakejima, H. Miyamoto, Y. Ando, 1997 .

Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor

T. Anan, T. Ichihashi, A. Okamoto, 1991 .

0.2 mu m T-shaped gate 2DEGFETs with an (InAs) (GaAs) short period superlattice channel on a GaAs substrate

T. Itoh, M. Kuzuhara, N. Samoto, 1990, International Technical Digest on Electron Devices.

A novel electron‐beam exposure technique for 0.1‐μm T‐shaped gate fabrication

Kazuhiko Onda, Norihiko Samoto, T. Itoh, 1990 .