T. Sukegawa

Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices

T. Yamazaki, T. Sugii, K. Goto, 1995, Proceedings of International Electron Devices Meeting.

A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

T. Yamazaki, T. Sugii, K. Goto, 1999 .

Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy

H. Kumigashira, M. Oshima, Zhi Liu, 2010 .

Drive Current Enhancement in Sub- 40-nm CMOS Devices by Higher Carrier Activation with Laser Spike Annealing

Y. Wang, M. Kase, T. Sukegawa, 2006 .

Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

H. Kumigashira, M. Oshima, S. Toyoda, 2010 .

First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

S. Satoh, T. Yamamoto, T. Sukegawa, 2007, 2007 15th International Conference on Advanced Thermal Processing of Semiconductors.

Advantages of a New Scheme of Junction Profile Engineering with Laser Spike Annealing and Its Integration into a 45-nm Node High Performance CMOS Technology

T. Yamamoto, T. Sugii, H. Ohta, 2007, 2007 IEEE Symposium on VLSI Technology.

A comparative study of leakage mechanism of Co and Ni salicide processes

Toshihiro Sugii, K. Goto, T. Sukegawa, 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

Transmission Electron Microscopy Observation of CoSix Spikes in Si Substrates during Co-silicidation Process

Tomoji Nakamura, T. Sukegawa, A. Fushida, 1997 .

In-depth Profile Analysis in Metal/high-k Gate Stack Structures Studied by Synchrotron-radiation Photoelectron Spectroscopy

H. Kumigashira, M. Oshima, S. Toyoda, 2010 .