Y. Tada

A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

T. Yamazaki, T. Sugii, K. Goto, 1999 .

Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation

K. Suzuki, Y. Tada, T. Nagayama, 2008, IEEE Transactions on Electron Devices.

Decaborane (B/sub 10/H/sub 14/) ion implantation technology for sub-0.1-/spl mu/m PMOSFET's

T. Sugii, I. Yamada, K. Goto, 1999 .

A high performance 50 nm PMOSFET using decaborane (B/sub 10/H/sub 14/) ion implantation and 2-step activation annealing process

T. Sugii, T. Tanaka, Y. Momiyama, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Phosphorus and Boron Ion Implantation Profiles in Molybdenum Gates

K. Suzuki, Y. Tada, 2007, IEEE Transactions on Electron Devices.