Albena Paskaleva

发表

A review of pulsed NBTI in P-channel power VDMOSFETs

Ivica Manic, Danijel Dankovic, Snezana Djoric-Veljkovic, 2018, Microelectron. Reliab..

Surface potential model of a high-k HfO 2 -Ta 2 O 5 capacitor

Marin Hristov, Albena Paskaleva, George Angelov, 2012, MIXDES 2012.

Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode

Ninoslav Stojadinovic, Albena Paskaleva, Elena Atanassova, 2008, Microelectron. Reliab..

Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale

Albena Paskaleva, D. Spassov, Elena Atanassova, 2012, Microelectron. Reliab..

Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity

Albena Paskaleva, D. Spassov, Elena Atanassova, 2011, Microelectron. Reliab..

Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

Albena Paskaleva, Elena Atanassova, E. Atanassova, 2006, 2006 25th International Conference on Microelectronics.

Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack

N. Novkovski, A. Skeparovski, Albena Paskaleva, 2014, Microelectron. Reliab..

Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

Albena Paskaleva, Elena Atanassova, 2006 .

Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors

Albena Paskaleva, D. Spassov, Elena Atanassova, 2007, Microelectron. Reliab..

Verilog-A model of a high-k HfO 2 -Ta 2 O 5 capacitor

Marin Hristov, Albena Paskaleva, George Angelov, 2011, MIXDES 2011.

Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks

N. Novkovski, Albena Paskaleva, Elena Atanassova, 2008, Microelectron. Reliab..

Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs

Albena Paskaleva, Elena Atanassova, E. Atanassova, 2002, Microelectron. Reliab..

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films

Albena Paskaleva, Anton J. Bauer, Martin Lemberger, 2005, Microelectron. Reliab..

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Lothar Frey, Heiner Ryssel, Albena Paskaleva, 2005, Microelectron. Reliab..

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers

Albena Paskaleva, Anton J. Bauer, Martin Lemberger, 2007, Microelectron. Reliab..

Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks

N. Novkovski, Albena Paskaleva, D. Spassov, 2010, Microelectron. Reliab..

Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes

Albena Paskaleva, Anton J. Bauer, K. Seidel, 2013 .

Constant current stress of Ti-doped Ta2O5 on nitrided Si

N. Novkovski, Albena Paskaleva, Elena Atanassova, 2009 .

Electrical characterization and reliability aspects of Zirconium Silicate films obtained from novel MOCVD precursors

Lothar Frey, Heiner Ryssel, Albena Paskaleva, 2004 .

Zirconium silicate films obtained from novel MOCVD precursors

Lothar Frey, Heiner Ryssel, Albena Paskaleva, 2003 .

Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy

Mathias Rommel, Albena Paskaleva, Anton J. Bauer, 2008 .

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

Tobias Erlbacher, Mathias Rommel, Heiner Ryssel, 2008 .

Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time

Lothar Frey, Albena Paskaleva, Anton J. Bauer, 2015 .

Structural changes in thin SiO2 on Si after RIE-like nitrogen plasma action

Albena Paskaleva, Elena Atanassova, 1997 .

High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity

Albena Paskaleva, Elena Atanassova, Dencho Spassov, 2010 .