X. Shen

发表

Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch

T. Tanaka, M. Shimizu, T. Ueda, 2012, IEEE Transactions on Electron Devices.

High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition

M. Shimizu, T. Ide, X. Shen, 2017 .

Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates

H. Okumura, X. Shen, N. Nakamura, 2007 .

Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

M. Shimizu, S. Chichibu, H. Okumura, 2001 .

Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy

M. Shimizu, H. Okumura, X. Shen, 2001 .

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

M. Shimizu, G. Y. Zhang, H. Okumura, 2009 .

Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBE

M. Shimizu, H. Okumura, H. Matsuhata, 2007 .

Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy

M. Shimizu, H. Okumura, T. Ide, 2001 .

Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction

M. Shimizu, H. Okumura, T. Ide, 2000 .

Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy

M. Shimizu, H. Okumura, T. Ide, 2000 .

Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition

M. Shimizu, T. Ide, X. Shen, 2017 .

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

B. Zhang, J. P. Liu, H. Yang, 2004 .

Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching with Hot Phosphoric Acid

M. Shimizu, H. Okumura, T. Ide, 2001 .

Single-phase high-quality semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire substrates

K. Kojima, H. Okumura, X. Shen, 2020, Applied Physics Express.

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

Baoshun Zhang, J. P. Liu, J. Zhu, 2004 .

Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates

Bingsen Zhang, H. Yang, X. Shen, 2002 .

Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD

Bingsen Zhang, H. Yang, Dongshan Zhao, 2002 .

Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates

X. Shen, Daisuke Kishimoto Daisuke Kishimoto, Tatau Nishinaga Tatau Nishinaga, 1994 .

Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates

H. Okumura, X. Shen, 2004 .

Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)

J. P. Liu, Bingsen Zhang, H. Yang, 2003 .

Surface step morphologies of GaN films grown on vicinal sapphire (0 0 0 1) substrates by rf-MBE

H. Okumura, X. Shen, 2007 .

Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

Hirofumi Matsuhata, Hajime Okumura, H. Okumura, 2005 .

The formation of GaN dots on AlxGa1−xN surfaces using Si in gas-source molecular beam epitaxy

Y. Aoyagi, Satoru Tanaka, X. Shen, 1998 .

Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy

Hajime Okumura, M. Shimizu, H. Okumura, 2003 .

Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition

M. Shimizu, T. Ide, X. Shen, 2016 .

Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

M. Shimizu, T. Ide, H. Matsuhata, 2015 .

High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer

M. Shimizu, T. Ide, X. Shen, 2015 .

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

G. Chen, M. Shimizu, T. Ide, 2013 .

Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates

M. Shimizu, H. Okumura, T. Ide, 2013 .

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer

Tokio Takahashi, M. Shimizu, T. Ide, 2012 .

Polarity control in MBE growth of III-nitrides, and its device application

Toshihide Ide, M. Shimizu, H. Okumura, 2002 .

Electrical properties of AlGaN∕GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy

Hajime Okumura, N. Nakamura, K. Furuta, 2006 .

rf‐MBE growth and characterizations of AlGaN/GaN HEMTs on vicinal sapphire (0001) substrates

H. Okumura, X. Shen, H. Sazawa, 2008 .

Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy

H. Okumura, H. Matsuhata, X. Shen, 2005 .

Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD

M. Shimizu, H. Okumura, B. Shen, 2009 .

Epitaxial growth of GaN films on Si(110) substrates by rf-MBE

M. Shimizu, T. Ide, X. Shen, 2012 .

Strain states in GaN films grown on Si(111) and Si(110) substrates using a thin AlN/GaN superlattice interlayer

M. Shimizu, T. Ide, X. Shen, 2014 .

Demonstration of Quasi-AlGaN/GaN HFET Using Ultrathin GaN/AlN Superlattices as a Barrier Layer

M. Shimizu, T. Ide, X. Shen, 2010, IEEE Electron Device Letters.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

Gan Feng, J. Chen, W. Zheng, 2003 .

Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth

Y. Aoyagi, P. Ramvall, X. Shen, 1999 .

An Approach to Achieve Intense Photoluminescence of GaN

Y. Aoyagi, X. Shen, 1999 .

High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process

M. Shimizu, H. Okumura, K. Jeganathan, 2002 .

Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH3

H. Okumura, S. Hara, S. Sonoda, 2000 .

Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

M. Shimizu, H. Okumura, K. Jeganathan, 2002 .

Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBE

M. Shimizu, H. Okumura, X. Shen, 2007 .

Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano, Ikuo Suemune, Yoshinobu Aoyagi, 1999 .

Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

M. Shimizu, K. Kojima, H. Okumura, 2018 .

Grain Boundaries, Interfaces, Defects and Localized Quantum Structures in Ceramics. Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy.

C. Iwamoto, H. Okumura, H. Matsuhata, 2002 .

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

M. Shimizu, Y. Suzuki, S. Chichibu, 2001 .

Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy

C. Iwamoto, Y. Ikuhara, H. Okumura, 2001 .

Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations

M. Shimizu, H. Okumura, X. Shen, 2002 .

Ultra‐flat and high‐quality AlN thin films on sapphire (0001) substrates grown by rf‐MBE

H. Okumura, T. Ide, X. Shen, 2003 .

Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns

M. Shimizu, H. Okumura, T. Ide, 2001 .

Effect of In-doping in GaN Films Grown by Gas-source MBE

Y. Aoyagi, X. Shen, 2000 .

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

J. P. Liu, W. Zheng, H. Yang, 2003 .