N. Fukushima
发表
Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications
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M. Takayanagi,
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H. Satake,
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S. Komatsu,
K. Abe,
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2000
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S. Komatsu,
K. Abe,
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S. Komatsu,
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S. Murase,
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Shigenori Tanaka,
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K. Ando,
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K. Ando,
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K. Ando,
N. Fukushima,
Shin‐ichi Nakamura,
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K. Ando,
N. Fukushima,
H. Niu,
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K. Ando,
N. Fukushima,
H. Niu,
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Structural modulation and superconducting properties in Bi2-xPbxSr2CaCu2O8+d and Bi2-yPbySr2YCu2O8+d
K. Ando,
N. Fukushima,
Shin‐ichi Nakamura,
1989
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K. Ando,
N. Fukushima,
H. Niu,
1988
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S. Murase,
N. Fukushima,
H. Yoshino,
1987
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S. Takeno,
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H. Yoshino,
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M. Koike,
K. Abe,
N. Fukushima,
1997
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S. Komatsu,
K. Abe,
N. Fukushima,
1998
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K. Abe,
N. Fukushima,
T. Kawakubo,
2002
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K. Abe,
N. Fukushima,
T. Kawakubo,
1999
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Interfacial properties of single-crystalline CeO2 high-k gate dielectrics directly grown on Si (111)
H. Satake,
N. Fukushima,
M. Yoshiki,
2002
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K. Ando,
N. Fukushima,
H. Niu,
1988
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S. Komatsu,
K. Abe,
N. Fukushima,
1998
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K. Abe,
N. Fukushima,
T. Kawakubo,
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Masamichi Suzuki,
Masato Koyama,
Noburu Fukushima,
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K. Ando,
N. Fukushima,
H. Niu,
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K. Ando,
N. Fukushima,
Shin‐ichi Nakamura,
1989
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S. Ikegawa,
N. Yasuda,
N. Fukushima,
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H. Satake,
N. Fukushima,
T. Yamaguchi,
2001,
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Akira Toriumi,
Noburu Fukushima,
Hideki Satake,
2000,
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
K. Abe,
N. Fukushima,
M. Izuha,
1998
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N. Fukushima,
M. Suzuki,
N. Fukushima,
2005,
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
H. Satake,
N. Fukushima,
T. Ino,
2002,
Digest. International Electron Devices Meeting,.
K. Page,
Masahiro Kato,
N. Fukushima,
2015
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T. Yamaguchi,
I. Hirano,
M. Takayanagi,
2005,
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..