D. Roberts

MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/ and Zr silicate gate dielectrics

D. Kwong, Sungjoo Lee, H. Luan, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

High quality ultra thin CVD HfO/sub 2/ gate stack with poly-Si gate electrode

D. Kwong, Sungjoo Lee, S.J. Lee, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

High quality CVD TaN gate electrode for sub-100 nm MOS devices

D. Kwong, Y.H. Kim, S.J. Lee, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Ultra thin high quality Ta2O5 gate dielectric prepared by in-situ rapid thermal processing

R. Vrtis, H. Luan, D. Roberts, 1998 .

Ultra thin high quality Ta/sub 2/O/sub 5/ gate dielectric prepared by in-situ rapid thermal processing

R. Vrtis, H. Luan, D. Roberts, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Formation of two-way shape memory effect in NiTi alloy using pulsed laser irradiation

Saidjafarzoda Ilhom, Peizhen Li, Zachary Thomas, 2018, LASE.