C. Pomarede

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

D. Muller, J. Grazul, P. Kalavade, 2001 .

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

G. Bersuker, R. Bergmann, G. Gebara, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

T. Nigam, A. Kornblit, M.R. Baker, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).