M. Koyama

发表

Thermally stable ultra-thin nitrogen incorporated ZrO/sub 2/ gate dielectric prepared by low temperature oxidation of ZrN

K. Suguro, M. Koike, M. Koyama, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes

Yoshifumi Nishi, Masamichi Suzuki, Masato Koyama, 2013 .

Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices

S. Sasa, T. Maemoto, M. Inoue, 2008 .

Degradation of current drivability of schottky barrier source/drain transistors induced by high-k gate dielectrics and possible measures to suppress the phenomenon

M. Ono, A. Nishiyama, M. Koyama, 2006 .

Influences of nonuniformity in metal concentration in gate dielectric silicate on CMIS inverters' propagation delay time

M. Ono, A. Nishiyama, M. Koyama, 2004 .

Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems

M. Sato, J. Koga, Y. Tsuchiya, 2006, 2006 International Electron Devices Meeting.

Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions

S. Sasa, T. Maemoto, M. Inoue, 2008 .

Dynamics of the Charge Centroid in Metal--Oxide--Nitride--Oxide--Silicon Memory Cells during Avalanche Injection and Fowler--Nordheim Injection Based on Incremental-Step-Pulse Programming

N. Yasuda, M. Koyama, J. Fujiki, 2011 .

Fabricating high performance a-Si solar cells by alternately repeating deposition and hydrogen plasma treatment method

Hirofumi Tanaka, M. Koyama, T. Miyashita, 1994 .

Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

I. Ohdomari, M. Koyama, K. Yokoyama, 1997 .

Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge Plasma

Y. Imanishi, A. Matsuda, Kazunobu Tanaka, 1986 .

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Y. Tsunashima, M. Takayanagi, M. Sato, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Diffusion and activation of n-type dopants in germanium

K. Tatsumura, A. Nishiyama, Y. Kamata, 2007, cond-mat/0703708.

Method for precise extraction of optical functions from transmission electron energy loss spectroscopy

Y. Kamimuta, M. Koike, M. Koyama, 2006 .

Preparation of highly photosensitive hydrogenated amorphous Si‐Ge alloys using a triode plasma reactor

Y. Imanishi, A. Matsuda, M. Koyama, 1985 .

Dielectric properties of noncrystalline HfSiON

Y. Mitani, A. Nishiyama, Y. Kamata, 2006, cond-mat/0601503.

Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-k Gate Dielectric Technology

A. Kinoshita, M. Koyama, Masamichi Suzuki, 2009 .

Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/SiO2 interfaces

J. Koga, Y. Tsuchiya, A. Kinoshita, 2007 .

Physical mechanism of work function modulation due to impurity pileup at Ni-FUSI/SiO(N) interface

J. Koga, Y. Tsuchiya, A. Kinoshita, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Careful examination on the asymmetric Vfb shift problem for poly-Si/HfSiON gate stack and its solution by the Hf concentration control in the dielectric near the poly-Si interface with small EOT expense

M. Takayanagi, A. Kaneko, K. Eguchi, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Preparation of highly photosensitive hydrogenated amorphous Si‐C alloys from a glow‐discharge plasma

Y. Imanishi, A. Matsuda, Kazunobu Tanaka, 1986 .

Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9 Films and Ultra-Thin SiN Buffer Layers

S. Takagi, M. Koyama, A. Takashima, 2000 .

Characteristics of the Hf0.5Zr0.5O2 Thin Films Grown by a Chemical Solution Deposition Method

M. Koyama, M. Yano, K. Koike, 2019, Journal of the Society of Materials Science, Japan.

Electron Transport in InAs/AlGaSb Ballistic Rectifiers

S. Sasa, T. Maemoto, M. Inoue, 2006 .

Fabrication and Characterization of InAs Mesoscopic Devices

S. Sasa, T. Maemoto, M. Inoue, 2006 .

Backside-SIMS profiling of dopants in thin Hf silicate film

Y. Kamimuta, M. Koyama, C. Hongo, 2004 .

Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008, IEEE Transactions on Electron Devices.

Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

J. Koga, A. Nishiyama, Y. Tsuchiya, 2006 .

Dielectric Constant Behavior of Hf–O–N System

A. Nishiyama, Y. Kamimuta, M. Koyama, 2005 .

Dynamics of the Charge Centroid in Metal–Oxide–Nitride–Oxide–Silicon Memory Cells during Avalanche Injection and Fowler–Nordheim Injection Based on Incremental-Step-Pulse Programming

N. Yasuda, M. Koyama, J. Fujiki, 2011 .

LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate

Masamichi Suzuki, Masato Koyama, Noburu Fukushima, 2008 .

Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

K. Kakushima, H. Iwai, K. Ohmori, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Physical origin of suppressed effective work function modulation at boron segregated NiSi∕SiON interface

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing

A. Nishiyama, Y. Kamimuta, M. Koike, 2004 .

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Takayanagi, S. Inumiya, M. Suzuki, 2002, Digest. International Electron Devices Meeting,.

Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs

M. Suzuki, T. Ino, A. Nishiyama, 2003, IEEE International Electron Devices Meeting 2003.

Control of electronic properties of HfO2 with fluorine doping from first-principles

T. Schimizu, M. Koyama, 2008 .

Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7

A. Kinoshita, T. Schimizu, M. Koyama, 2009 .

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

J. Koga, A. Nishiyama, Y. Tsuchiya, 2009 .

Dramatic improvement of Ge p-MOSFET characteristics realized by amorphous zr-silicate/ge gate stack with excellent structural stability through process temperatures

R. Iijima, Y. Kamata, M. Koyama, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

Y. Tsunashima, M. Sato, K. Eguchi, 2006, 2006 International Electron Devices Meeting.

Physical Understanding of Gate-Depletion Phenomena in Poly-Si/HfSiON Stacks Based on $C$–$V$ Differentiation Analysis

M. Saitoh, T. Saito, K. Sekine, 2007, IEEE Transactions on Electron Devices.