M. Yoshiki
发表
K. Suguro,
M. Koike,
M. Koyama,
2001,
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
H. Satake,
D. Matsushita,
N. Fukushima,
2004
.
N. Shimomura,
H. Yoda,
K. Ikegami,
2018
.
N. Sano,
S. Nunoue,
M. Yoshiki,
2017
.
M. Yoshiki,
H. Yamazaki,
R. Takaishi,
2012
.
M. Sato,
J. Koga,
Y. Tsuchiya,
2006,
2006 International Electron Devices Meeting.
Miyoko O. Watanabe,
A. Murakoshi,
M. Yoshiki,
1993
.
J. Koga,
Y. Tsuchiya,
A. Kinoshita,
2007
.
J. Koga,
Y. Tsuchiya,
A. Kinoshita,
2005,
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
A. Murakoshi,
M. Yoshiki,
I. Mizushima,
1994
.
S. Machida,
M. Yoshiki,
Y. Mori,
1992
.
S. Machida,
M. Yoshiki,
Y. Mori,
1992
.
T. Hatanaka,
M. Yoshiki,
Y. Ishimaru,
1992
.
O. Furukawa,
M. Yoshiki,
H. Kanai,
1995
.
T. Harada,
M. Yoshiki,
Takashi Tomita,
2022,
Drug development and industrial pharmacy.
H. Satake,
M. Yoshiki,
Y. Kitajima,
1999
.
M. Yoshiki,
M. Oki,
M. Takenaka,
2014,
Applied spectroscopy.
Interfacial properties of single-crystalline CeO2 high-k gate dielectrics directly grown on Si (111)
H. Satake,
N. Fukushima,
M. Yoshiki,
2002
.
J. Koga,
A. Nishiyama,
Y. Tsuchiya,
2008,
IEEE Transactions on Electron Devices.
Y. Yamashita,
M. Yoshiki,
H. Kanai,
1994
.
N. Shimomura,
H. Yoda,
M. Yoshiki,
2019
.
T. Yokoyama,
Hiroshi Tanaka,
K. Seki,
1989
.
J. Koga,
A. Nishiyama,
Y. Tsuchiya,
2008
.
J. Koga,
A. Nishiyama,
Y. Tsuchiya,
2008
.
T. Schimizu,
T. Kawakubo,
M. Yoshiki,
2001
.
High-sensitivity x-ray absorption fine structure investigation of arsenic shallow implant in silicon
M. Yoshiki,
M. Tomita,
H. Yamazaki,
2009
.
S. Takagi,
E. Kamiya,
M. Yoshiki,
1997
.
J. Koga,
A. Nishiyama,
Y. Tsuchiya,
2009
.