Y. Kamimuta

Thermally stable ultra-thin nitrogen incorporated ZrO/sub 2/ gate dielectric prepared by low temperature oxidation of ZrN

K. Suguro, M. Koike, M. Koyama, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Careful examination on the asymmetric Vfb shift problem for poly-Si/HfSiON gate stack and its solution by the Hf concentration control in the dielectric near the poly-Si interface with small EOT expense

M. Takayanagi, A. Kaneko, K. Eguchi, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Surface migration dynamics of a planar organic molecule studied by pulsed molecular beam scattering

R. Hashimoto, Y. Kamimuta, A. Koma, 2000 .

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Takayanagi, S. Inumiya, M. Suzuki, 2002, Digest. International Electron Devices Meeting,.

Dramatic improvement of Ge p-MOSFET characteristics realized by amorphous zr-silicate/ge gate stack with excellent structural stability through process temperatures

R. Iijima, Y. Kamata, M. Koyama, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Physical Understanding of Gate-Depletion Phenomena in Poly-Si/HfSiON Stacks Based on $C$–$V$ Differentiation Analysis

M. Saitoh, T. Saito, K. Sekine, 2007, IEEE Transactions on Electron Devices.