J. Kim

HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport

R. Carruthers, T. Ma, T. Tamagawa, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Thermal characterization of GaN vertical p-i-n diodes

R. Dupuis, J. S. Lundh, G. Pavlidis, 2017, 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).

8.5 Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

R. Dupuis, S. Shen, T. Kao, 2014 .

Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

Jr., F. Ren, S. Pearton, 2019, International Journal of High Speed Electronics and Systems.

Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

F. Ren, S. Pearton, C. Abernathy, 2002, IEEE Electron Device Letters.

New applications advisable for gallium nitride

F. Ren, S. Pearton, G. Thaler, 2002 .

Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

J. Kim, F. Ren, Y. Irokawa, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

B. Gila, L. Voss, J. Kim, 2008 .

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

L. Liu, C. F. Lo, Y. Y. Xi, 2012, Photonics West - Optoelectronic Materials and Devices.

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .