Taeho Cha

Robust ternary metal gate electrodes for dual gate CMOS devices

Heung-Jae Cho, J. Roh, V. Misra, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Heung-Jae Cho, J. Roh, K. Lim, 2002 .

Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.

Chulsung Kim, Hyoungsub Kim, Eunha Lee, 2017, ACS applied materials & interfaces.

Study on the transition temperature and phase formation sequence in TiZr silicides on Si(100)

Taeho Cha, H. Jeon, Hwack-Joo Lee, 1999 .

Characteristics of sputtered Ti1-xAlxN films for storage node electrode barriers

J. Park, Dae-gyu Park, Taeho Cha, 2001 .

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

J. Roh, S. Jang, J. Park, 2002 .

Oxidation Resistance of Sputtered Ti1 ­ x Al x N Films for Complementary Metal Oxide Semiconductor Storage Node Electrode Barriers

J. Rhee, Taeho Cha, Sam-Dong Kim, 2001 .

Reliability Characteristics of W / WN / TaO x N y / SiO2 / Si Metal Oxide Semiconductor Capacitors

Heung-Jae Cho, K. Lim, J. Park, 2002 .

Effects of TiN Deposition on the Characteristics of W / TiN / SiO2 / Si Metal Oxide Semiconductor Capacitors

Heung-Jae Cho, K. Lim, J. Park, 2001 .

Novel damage-free direct metal gate process using atomic layer deposition

Heung-Jae Cho, Dae-Gyu Park, Kwan-Yong Lim, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).