I. Yeo

发表

Robust ternary metal gate electrodes for dual gate CMOS devices

Heung-Jae Cho, J. Roh, V. Misra, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Robust multi-bit programmable flash memory using a resonant tunnel barrier

U. Chung, J. Moon, B. Ryu, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory

U. Chung, J. Moon, Juyul Lee, 2007, 2007 IEEE Symposium on VLSI Technology.

A Study on Oxidation Behavior of Poly-Si1 xGex Films

Y. H. Lee, D. Ko, Cheol‐Woong Yang, 2003 .

Effects of thermal processes after silicidation on the performance of TiSi/sub 2//polysilicon gate device

S. Jang, Tae-Kyun Kim, I. Yeo, 1999 .

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Heung-Jae Cho, J. Roh, K. Lim, 2002 .

Roles of sidewall oxidation in the devices with shallow trench isolation

Dae-Hee Weon, I. Yeo, S. Pyi, 1999 .

Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions

B. Cho, Sun Jung Kim, C. Ling, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

Integration and Electrical Properties of Carbon Nanotube Array for Interconnect Applications

Joo-Tae Moon, In-Seok Yeo, Hong Sik Yoon, 2006, 2006 Sixth IEEE Conference on Nanotechnology.

Novel transition layer engineered Si nanocrystal flash memory with MHSOS structure featuring large V/sub th/ window and fast P/E speed

I. Yoo, U. Chung, J. Moon, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

The role of polysilicon film in the suppression of bird's beak in poly-buffered LOCOS

S. Jang, I. Yeo, Young‐Bog Kim, 1999 .

Selective oxidation behavior of W/WN/polycrystalline-Si1−xGex gate structure in H2O+H2 ambient

J. Roh, I. Yeo, T. Ahn, 2003 .

Sidewall oxidation behavior of dichlorosilane-based W-polycide gate

I. Yeo, S. Pyi, H. Kim, 2001 .

Linewidth dependence of stress relaxation and microstructural change in passivated Al(Cu) lines

P. Ho, H. Kawasaki, I. Yeo, 1997 .

Properties of Polycrystalline Si 1 - x Ge x Films Grown by Ultrahigh Vacuum CVD Using Si 2 H 6 and GeH 4

Jonghyeon Kim, D. Ko, T. Lee, 2003 .

In situ transmission electron microscopy study of plastic deformation and stress-induced voiding in Al–Cu interconnects

J. Stark, P. Ho, H. Kawasaki, 1997 .

The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

Y. H. Lee, D. Ko, I. Yeo, 2001 .

The physical and electrical properties of polycrystalline Si1-xGex as a gate electrode material for ULSI CMOS structures

Hoo-Jeong Lee, D. Ko, I. Yeo, 2000 .

Junction leakage characteristics in modified LOCOS isolation structures with a nitride spacer

S. Jang, I. Yeo, Young‐Bog Kim, 1999 .

Oxidation behavior of a patterned TiSi2/polysilicon stack

S. Jang, J. Park, Jun-Mo Yang, 2001 .

Wet oxidation behaviors of polycrystalline Si1−xGex films

Y. H. Lee, D. Ko, I. Yeo, 2001 .

An extended critical-scaling equation with a nonlinear order parameter and its use for the fits to vapor/liquid equilibria

I. Yeo, Kyung-Hee Lim, 2014 .

Characteristics of sputtered Ti1-xAlxN films for storage node electrode barriers

J. Park, Dae-gyu Park, Taeho Cha, 2001 .

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

J. Roh, S. Jang, J. Park, 2002 .

Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications

U-In Chung, In-Seok Yeo, In-Gyu Baek, 2006, 2009 Symposium on VLSI Technology.

Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

In-Seok Yeo, Seong Chu Lim, Dong Jae Bae, 2009 .

Characteristics of TaOxNy Gate Dielectric with Improved Thermal Stability

Heung-Jae Cho, J. Roh, J. Park, 2001 .

Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.

U. Chung, J. Moon, Sangsig Kim, 2006, Nano letters.

Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors

Heung-Jae Cho, K. Lim, J. Park, 2002 .

Reliability Characteristics of W / WN / TaO x N y / SiO2 / Si Metal Oxide Semiconductor Capacitors

Heung-Jae Cho, K. Lim, J. Park, 2002 .

In situ transmission electron microscopy study of plastic deformation in passivated Al-Cu thin films

J. Stark, P. Ho, H. Kawasaki, 1997 .

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

In-Seok Yeo, Heung-Jae Cho, Dae-Gyu Park, 2001 .

Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

U-In Chung, Byung-Il Ryu, In-Seok Yeo, 2006, 2006 International Electron Devices Meeting.

Characteristics of thermal stresses in Al(Cu) fine lines. II. Passivated line structures

P. Ho, I. Yeo, S. Anderson, 1995 .

Effects of TiN Deposition on the Characteristics of W / TiN / SiO2 / Si Metal Oxide Semiconductor Capacitors

Heung-Jae Cho, K. Lim, J. Park, 2001 .

Novel damage-free direct metal gate process using atomic layer deposition

Heung-Jae Cho, Dae-Gyu Park, Kwan-Yong Lim, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

STTM-promising nanoelectronic DRAM device

U. Chung, J. Moon, Z. Huo, 2004, 4th IEEE Conference on Nanotechnology, 2004..

Effects of Ge Content on the Oxidation Behavior of Poly- Si1 − x Ge x Layers for Gate Electrode Application

J. Park, Tae-Kyun Kim, I. Yeo, 2001 .

Selective growth of carbon nanotube for via interconnects by oxidation and selective reduction of catalyst

U. Chung, J. Moon, S. K. Lee, 2008 .

1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device

H.-S. Philip Wong, Joo-Tae Moon, Yuan Zhang, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).