J. G. Keizer

发表

Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

T. Noda, K. Sakoda, P. Koenraad, 2011 .

Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy

A. D. Giddings, J. G. Keizer, M. Hara, 2010, 1010.5888.

A two-qubit gate between phosphorus donor electrons in silicon

M. Y. Simmons, M. Simmons, J. G. Keizer, 2019, Nature.

Extracting inter-dot tunnel couplings between few donor quantum dots in silicon

M. Broome, M. Simmons, J. G. Keizer, 2016, 1606.00851.

Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy

K. Sakoda, P. Koenraad, T. Mano, 2011 .

Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

T. Noda, M. Bichler, K. Sakoda, 2011 .

High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon.

M. Y. Simmons, M. Broome, M. Simmons, 2017, Physical review letters.

Benchmarking high fidelity single-shot readout of semiconductor qubits

M. Broome, M. Simmons, J. G. Keizer, 2018, New Journal of Physics.

Engineering topological states in atom-based semiconductor quantum dots

M. Simmons, J. G. Keizer, S. K. Gorman, 2022, Nature.

Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

P. Koenraad, A. D. B. Maia, A. Quivy, 2012 .

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

R. Nötzel, A. Govorov, P. Koenraad, 2010 .

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.

M. Simmons, S. McKibbin, J. G. Keizer, 2015, ACS nano.

Simple and efficient scanning tunneling luminescence detection at low-temperature.

J. Garleff, J. G. Keizer, P. Koenraad, 2009, The Review of scientific instruments.

InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

A. D. Utrilla, P. Koenraad, J. Ulloa, 2014 .

Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots

M. Bichler, G. Abstreiter, P. Koenraad, 2011 .

Tunneling statistics for analysis of spin-readout fidelity

M. Broome, M. Simmons, J. G. Keizer, 2017, 1710.02243.

Modelling of a pinched cascaded arc light source using argon

J. G. Keizer, J. van der Mullen, R. Zijlmans, 2006 .

Height control of self-assembled quantum dots by strain engineering during capping

P. Smereka, Davide Grossi, P. Koenraad, 2014 .

Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor

M. Simmons, J. G. Keizer, M. House, 2019, Nature Nanotechnology.

Mapping the chemical potential landscape of a triple quantum dot

M. Broome, M. Simmons, J. G. Keizer, 2016, 1609.03381.

Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot

M. Broome, M. Simmons, J. G. Keizer, 2018, Applied Physics Letters.

Two-electron spin correlations in precision placed donors in silicon

C D Hill, L. Hollenberg, L. Hollenberg, 2018, Nature Communications.

Addressable electron spin resonance using donors and donor molecules in silicon

Michelle Y. Simmons, Yu Wang, Rajib Rahman, 2018, Science Advances.

Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.

M. Simmons, S. Koelling, J. G. Keizer, 2015, ACS nano.

Single-charge detection by an atomic precision tunnel junction

M. Simmons, J. G. Keizer, M. House, 2014, 1403.5320.

Low resistivity, super-saturation phosphorus-in-silicon monolayer doping

M. Simmons, S. McKibbin, J. G. Keizer, 2014 .

Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

R. Nötzel, P. Koenraad, J. G. Keizer, 2013 .

Precise shape engineering of epitaxial quantum dots by growth kinetics

S. Sanguinetti, J. Bocquel, P. Koenraad, 2015 .

Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon

M. Simmons, J. G. Keizer, S. K. Gorman, 2020, Advanced materials.

Multi‐Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions

M. Simmons, Y. Hsueh, Yousun Chung, 2023, Advanced Functional Materials.

Coherent control of a donor-molecule electron spin qubit in silicon

M. Simmons, Yousun Chung, J. G. Keizer, 2021, Nature Communications.

Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction.

M. Simmons, Yousun Chung, J. G. Keizer, 2021, Nano letters.

An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

G. Abstreiter, M. Bichler, J. Finley, 2010, Nanotechnology.

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

T. Noda, K. Sakoda, J. Bocquel, 2010 .

The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors

M. Simmons, J. G. Keizer, S. K. Gorman, 2022, Advanced materials.

A comparison of the physical properties of four new generation flexible ureteroscopes: (de)flection, flow properties, torsion stiffness, and optical characteristics.

A. Hendrikx, J. G. Keizer, A. J. Arends, 2008, Journal of endourology.

Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms

M. Brandt, M. Bichler, G. Abstreiter, 2011, 1112.2585.

Shape control of QDs studied by cross-sectional scanning tunneling microscopy

T. Noda, M. Bichler, K. Sakoda, 2010, 1011.3316.