J. R. Ayres

发表

33.5L: Late News Paper: Dynamic Self‐Refreshing Memory‐in‐Pixel Circuit for Low Power Standby Mode in Mobile LTPS TFT‐LCD

Kazuyuki Hashimoto, Keitaro Yamashita, A. Iwatsu, 2004 .

Negative gate bias instability in polycrystalline silicon TFT's

J. R. Ayres, Nigel D. Young, N. Young, 1995 .

Photocurrents in poly-Si TFTs

J. R. Ayres, P. J. Dobson, S. D. Brotherton, 1994 .

Influence of melt depth in laser crystallized poly-Si thin film transistors

J. P. Gowers, J. R. Ayres, S. D. Brotherton, 1997 .

NUMERICAL ANALYSIS OF THE ELECTRICAL CHARACTERISTICS OF GATE OVERLAPPED LIGHTLY DOPED DRAIN POLYSILICON THIN FILM TRANSISTORS

J. R. Ayres, S. D. Brotherton, G. Fortunato, 1999 .

Laser crystallised poly-Si TFTs for AMLCDs

J. P. Gowers, J. R. Ayres, S. D. Brotherton, 1999 .

Hot carrier effects in devices and circuits formed from poly-Si

J. R. Ayres, N. Young, 1994 .

Fabrication and Characterisation of Poly-Si TFTs on Glass

J. R. Ayres, S. D. Brotherton, D. McCulloch, 1995 .

Current DLTS Measurements on Poly-Si Thin Film Transistors

J. R. Ayres, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

G. A. Armstrong, J. R. Ayres, S. D. Brotherton, 1997 .

High-speed, short-channel polycrystalline silicon thin-film transistors

J. R. Ayres, S. D. Brotherton, John R. A. Ayres, 2004 .

Comparison of electrical defects in Ge+ and Si+ preamorphized BF2‐implanted silicon

J. R. Ayres, S. D. Brotherton, A. Gill, 1987 .

Deep levels of copper in silicon

J. R. Ayres, H. W. van Kesteren, S. D. Brotherton, 1987 .

Characterisation of low temperature poly-Si thin film transistors

J. R. Ayres, S. D. Brotherton, N. Young, 1991 .

Modeling of laser-annealed polysilicon TFT characteristics

G. A. Armstrong, J. R. Ayres, S. Uppal, 1997, IEEE Electron Device Letters.

Analysis of Drain Field and Hot Carrier Stability of Poly-Si Thin Film Transistors

J. R. Ayres, M. J. Trainor, S. D. Brotherton, 1998 .

Characterization of trapping states in polycrystalline‐silicon thin film transistors by deep level transient spectroscopy

J. R. Ayres, John R. A. Ayres, 1993 .

Defects and leakage currents in BF2‐implanted preamorphized silicon

J. P. Gowers, J. R. Ayres, S. D. Brotherton, 1986 .

A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

J. R. Ayres, A. Pecora, Luigi Mariucci, 2003 .

Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin-film transistors with different LDD doping concentration

J. R. Ayres, Luigi Mariucci, Alessandro Pecora, 2003 .

Control and analysis of leakage currents in poly‐Si thin‐film transistors

J. R. Ayres, M. J. Trainor, S. D. Brotherton, 1996 .

Electrically active defects in deep preamorphized single‐crystal silicon layers

J. R. Ayres, S. D. Brotherton, 1992 .

DEFECTS IN PREAMORPHIZED SINGLE-CRYSTAL SILICON

J. R. Ayres, S. D. Brotherton, J. Shannon, 1990 .

Electrically active defects in shallow pre-amorphisedp+n junctions in silicon

J. P. Gowers, J. R. Ayres, S. D. Brotherton, 1989 .

A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors

G. A. Armstrong, J. R. Ayres, S. D. Brotherton, 1996 .