Yuan Ren

1.2kV/2.9mΩ.cm2 Vertical NiO/β-Ga2 O3 Heterojunction Diodes with High Switching Performance

Shanyong Wang, Gang Wang, Rongsheng Chen, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C–V characteristics of AlGaN/GaN Schottky barrier diodes

Shuti Li, Yuan Ren, Ningyang Liu, 2022, Materials Science in Semiconductor Processing.

Analysis of Electrical Properties in Ni/GaN Schottky Contacts on nonpolar/semipolar GaN free-standing Substrates

Yuan Ren, Liuan Li, Bin Dong, 2021, Journal of Alloys and Compounds.

Highly-Rectifying Graphene/GaN Schottky Contact for Self-Powered UV Photodetector

Shanyong Wang, Changjian Zhou, Y. Lv, 2021, IEEE Photonics Technology Letters.

Quasi-vertical GaN merged PN Schottky diode by using the p-NiO/n-GaN heterojunction

Yuan Ren, Liuan Li, Qiliang Wang, 2023, Vacuum.