Guido T. Sasse

Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions

Guido T. Sasse, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Reliability Simulation Models for Hot Carrier Degradation

A. J. Scholten, Guido T. Sasse, B. De Vries, 2015 .

RF CMOS reliability simulations

Jurriaan Schmitz, Mustafa Acar, Guido T. Sasse, 2008, Microelectron. Reliab..

The hot carrier degradation rate under AC stress

Guido T. Sasse, Jaap Bisschop, 2010, 2010 IEEE International Reliability Physics Symposium.

Device degradation models for circuit reliability simulation

Guido T. Sasse, 2013 .

Aging models for n- and p-type LDMOS covering low, medium and high VGS operation

Guido T. Sasse, Ljubo Radic, Vignesh Subramanian, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).