C. Chang

Degradations due to hole trapping in flash memory cells

J. Lien, S. Haddad, C. Chang, 1989, IEEE Electron Device Letters.

Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices

S. Haddad, C. Chang, J. Yue, 1990, 28th Annual Proceedings on Reliability Physics Symposium.

MOSFET Degradation due to stressing of thin oxide

M. Liang, R. Brodersen, C. Hu, 1984, 1982 International Electron Devices Meeting.

Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devices

S. Haddad, J. Lien, S. Haddad, 1988, IEEE Electron Device Letters.

Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics

Donggun Park, Chenming Hu, A. Kalnitsky, 1998, IEEE Electron Device Letters.

Quantum yield of electron impact ionization in silicon

Robert W. Brodersen, Chenming Hu, C. Hu, 1985 .

Valence-band tunneling induced low frequency noise in ultrathin oxide (15 Å) n-type metal-oxide-semiconductor field effect transistors

G. Huang, Tahui Wang, Chao-Ching Cheng, 2004 .

LOW FREQUENCY NOISE DEGRADATION IN ULTRA-THIN OXIDE ( 15 Å ) ANALOG n-MOSFETS RESULTING FROM VALENCE-BAND TUNNELING

Tahui Wang, C. Chang, J. W. Wu, 2005 .