Y. Araki

Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices

K. Yoshikawa, E. Sakagami, N. Arai, 1996 .

A 3.3 V-only 16 Mb flash memory with row-decoding scheme

Y. Iyama, A. Umezawa, S. Atsumi, 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.