N. Moll

1.4 EFFICIENCY IMPROVEMENT IN TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P LIGHT-EMITTING DIODES WITH THIN (<2000 A) ACTIVE REGIONS

S. A. Stockman, T. S. Tan, C. Kocot, 1999 .

Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates

C. Su, H. Rohdin, V. M. Robbins, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Growth and device performance of InP/GaAsSb HBTs

S. Chung, J. Amano, H. Rohdin, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Control of Be diffusion in molecular beam epitaxy GaAs

D. Collins, N. Moll, Jeffrey N. Miller, 1985 .

A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability

C. Su, H. Rohdin, V. M. Robbins, 1999 .

Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb

K. Kavanagh, C. Bolognesi, S. Watkins, 2001 .

Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs

N. Moll, C. Su, H. Rohdin, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

The role of aluminum in selective reactive ion etching of GaAs on AlGaAs

K. Seaward, W. Stickle, N. Moll, 1988 .