Zhenguo Lin

发表

Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors.

Weijing Wu, L. Lan, P. Xiao, 2016, ACS applied materials & interfaces.

Letter: Solution‐processed flexible zinc‐tin oxide thin‐film transistors on ultra‐thin polyimide substrates

Miao Xu, L. Lan, D. Luo, 2016 .

Effects of Rare-Earth Element Dopants in High-Mobility InOx-Based Thin-Film Transistors

Lei Wang, L. Lan, P. Xiao, 2016, IEEE Electron Device Letters.

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Miao Xu, L. Lan, D. Luo, 2016, Scientific Reports.

Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact

T. Wen, Yeong-Her Wang, Mei-Ying Chang, 2009 .

Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted perchlorate aqueous precursors.

L. Lan, Junbiao Peng, Wei Song, 2017, Chemical communications.

Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

L. Lan, P. Xiao, Junbiao Peng, 2015 .

Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process

Miao Xu, L. Lan, Hua Xu, 2015 .

Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1−xO3 semiconductor

Miao Xu, L. Lan, Hua Xu, 2016 .

Effects of Solvent Treatment on the Characteristics of InGaZnO Thin-Film Transistors

L. Lan, P. Xiao, Junbiao Peng, 2014 .

High mobility flexible polymer thin-film transistors with an octadecyl-phosphonic acid treated electrochemically oxidized alumina gate insulator

Miao Xu, L. Lan, Hua Xu, 2015 .

All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns.

L. Lan, Junbiao Peng, Wei Song, 2017, ACS applied materials & interfaces.

InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers

L. Lan, P. Xiao, Junbiao Peng, 2014 .

Thin-Film Transistors With Neodymium-Incorporated Indium–Zinc-Oxide Semiconductors

L. Lan, P. Xiao, Junbiao Peng, 2016, IEEE Transactions on Electron Devices.

Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V−1 s−1

L. Lan, P. Xiao, Junbiao Peng, 2017 .

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

L. Lan, P. Xiao, Junbiao Peng, 2016 .

High-performance thin-film transistors with solution-processed ScInO channel layer based on environmental friendly precursor

Lei Wang, Junbiao Peng, L. Lan, 2017 .

High-Mobility and Good-Stability Thin-Film Transistors With Scandium-Substituted Indium Oxide Semiconductors

Weijing Wu, L. Lan, P. Xiao, 2016, IEEE Transactions on Electron Devices.

High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer

Miao Xu, L. Lan, D. Luo, 2016 .

High-mobility thin film transistors with neodymium-substituted indium oxide active layer

P. Xiao, Junbiao Peng, Lei Wang, 2015 .

Effects of Nd in NdxIn1-xO3 Semiconductors for Thin-Film Transistors

Lei Wang, L. Lan, P. Xiao, 2015, IEEE Transactions on Electron Devices.

Studies on NdxIn1−xO3 semiconducting thin films prepared by rf magnetron sputtering

L. Lan, P. Xiao, Junbiao Peng, 2014 .

Solution-processed high-mobility neodymium-substituted indium oxide thin-film transistors formed by facile patterning based on aqueous precursors

L. Lan, Junbiao Peng, Lei Wang, 2017 .

2.1: Invited Paper: 16.9‐Inch Flexible AMOLED Display with High Performance Top Gate Oxide TFT

Yuan-chun Wu, Weiran Cao, Zhenguo Lin, 2021 .