Gianluca Fiori

发表

Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors

Giuseppe Iannaccone, Kartik Mohanram, Xuebei Yang, 2010, GLSVLSI '10.

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes

Wim Dehaene, Giuseppe Iannaccone, Praveen Raghavan, 2017, Scientific Reports.

Arsenene and Antimonene as new candidates for next-generation devices

Giuseppe Iannaccone, Nicola Marzari, Gianluca Fiori, 2016 .

Performance assessment ofgraphene-based lateral andvertical heterostructuretransistors

Gianluca Fiori, Giuseppe Iannaccone, Demetrio Logoteta, 2013 .

On the perspective of 2D materials for electronic applications

Gianluca Fiori, Giuseppe Iannaccone, 2016 .

Publisher Correction: Quantum engineering of transistors based on 2D materials heterostructures

Giuseppe Iannaccone, Luigi Colombo, Gianluca Fiori, 2018, Nature Nanotechnology.

The prospects of transition metal dichalcogenides for ultimately scaled CMOS

Frank Schwierz, Ralf Granzner, Gianluca Fiori, 2017 .

Electronics enabled by two-dimensional materials

Giuseppe Iannaccone, Gianluca Fiori, 2016 .

Modeling End-of-The-Roadmap CMOS devices

Giuseppe Iannaccone, Gianluca Fiori, Gilberto Curatola, 2003 .

Evaluating the performance of 2D materials-based devices through numerical simulations

Gianluca Fiori, Giuseppe Iannaccone, 2015 .

Multi-scale modelling of devices based on two-dimensional materials

Gianluca Fiori, 2016 .

Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs

Giuseppe Iannaccone, Gianluca Fiori, Gilberto Curatola, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Luca Selmi, Claire Fenouillet-Beranger, Asen Asenov, 2009 .

A SPICE-compatible model of Graphene Nano-Ribbon Field-Effect Transistors enabling circuit-level delay and power analysis under process variation

Giuseppe Iannaccone, Ying-Yu Chen, Deming Chen, 2013, 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Material selection and device design guidelines for two-dimensional materials based TFETs

Wim Dehaene, Iuliana Radu, Praveen Raghavan, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Multiscale Modeling for Graphene-Based Nanoscale Transistors

Giuseppe Iannaccone, Gianluca Fiori, G. Fiori, 2013, Proceedings of the IEEE.

Photonic devices with transient functionality

Gianluca Fiori, Dario Pisignano, Luana Persano, 2021 .

Electric-field controlled spin transport in bilayer CrI3

Giuseppe Iannaccone, Gianluca Fiori, Damiano Marian, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

MoS2/graphene Lateral Heterostructure Field Effect Transistors

Giuseppe Iannaccone, Max C. Lemme, Andras Kis, 2021, 2021 Device Research Conference (DRC).

Electric-field controlled spin transport in bilayer CrI3

Giuseppe Iannaccone, Gianluca Fiori, Damiano Marian, 2021, ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC).

Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation

Giuseppe Iannaccone, Gianluca Fiori, Marco Fanciulli, 2012 .

Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.

Gianluca Fiori, Yann-Michel Niquet, Stephan Roche, 2012, ACS nano.

Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field Effect Transistor

James S. Harris, Giuseppe Iannaccone, Gianluca Fiori, 2010, 2010 International Electron Devices Meeting.

Bilayer Graphene Transistors for Analog Electronics

Giuseppe Iannaccone, Daniel Neumaier, Gianluca Fiori, 2014, IEEE Transactions on Electron Devices.

Two-Dimensional Tunnel Transistors Based on ${\rm Bi}_{2}{\rm Se}_{3}$ Thin Film

Giuseppe Iannaccone, Qin Zhang, Gianluca Fiori, 2014, IEEE Electron Device Letters.

Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities

Gianluca Fiori, Paolo Marconcini, Massimo Macucci, 2016 .

Tunneling properties of vertical heterostructures of multilayer hexagonal boron nitride and graphene

Giuseppe Iannaccone, Gianluca Fiori, Samantha Bruzzone, 2012 .

Erratum: Electronics based on two-dimensional materials

Giuseppe Iannaccone, Luigi Colombo, Daniel Neumaier, 2014 .

Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit

Giuseppe Iannaccone, Gianluca Fiori, Gilberto Curatola, 2004 .

All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits.

Giuseppe Iannaccone, Helen Holder, Gianluca Fiori, 2018, ACS nano.

Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective

Wim Dehaene, Iuliana Radu, Aaron Thean, 2016, ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference.

Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport

Giuseppe Iannaccone, Gianluca Fiori, Gilberto Curatola, 2004 .

The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers

Giuseppe Iannaccone, Gianluca Fiori, Gilberto Curatola, 2018, IEEE Transactions on Electron Devices.

Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors

Giuseppe Iannaccone, Gianluca Fiori, G. Fiori, 2002 .

“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs

Giuseppe Iannaccone, Gianluca Fiori, 2003 .

A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation

Giuseppe Iannaccone, Deming Chen, Morteza Gholipour, 2015, IEEE Transactions on Nanotechnology.