Yuping Zeng

发表

Monolithic 3D CMOS Using Layered Semiconductors

C. Hu, A. Javey, A. Sachid, 2016, Advanced materials.

Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz

Yuping Zeng, V. Teppati, C. R. Bolognesi, 2011, IEEE Electron Device Letters.

Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate

Yuping Zeng, Peng Cui, 2021 .

High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg

Andrew J. Mercante, D. Prather, P. Yao, 2019, Applied Physics Express.

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

O. Ostinelli, A. Alt, C. Bolognesi, 2011, IEEE Electron Device Letters.

High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With $F_{T} ≫ \hbox{420}\ \hbox{GHz}$

Honggang Liu, O. Ostinelli, C. Bolognesi, 2007, IEEE Transactions on Electron Devices.

One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process

C. Ni, Yuping Zeng, Peng Cui, 2021, IEEE Electron Device Letters.

Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing

J. Vohs, S. McDonnell, Yuping Zeng, 2019, IEEE Electron Device Letters.

OPTIMIZATION OF THE DOUBLE DELTA DOPING HEMT SECOND LINE OF TITLE THIRD LINE OF TITLE FOURTH LINE OF TITLE

Mincheol Lee, Yuping Zeng, K. Barner, 2018 .

Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

Yuping Zeng, Peng Cui, 2021 .

High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric

C. Ni, T. Beebe, S. McDonnell, 2019, Applied Physics Express.

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

C. Ni, Cheng Li, Songyan Chen, 2020 .

Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells

A. Javey, Maxwell Zheng, M. Hettick, 2015, Scientific Reports.

5G Enabled Energy Innovation: Advanced Wireless Networks for Science, Workshop Report

Robert Kozma, Franck Cappello, Prasanna Balaprakash, 2020 .

Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation

Yuping Zeng, Peng Cui, 2022, Nanomaterials.

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

C. Ni, S. McDonnell, Yuping Zeng, 2021, ACS Applied Electronic Materials.

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Kun Qian, J. Kolodzey, Cheng Li, 2022, Journal of Alloys and Compounds.

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

Cheng Li, Songyan Chen, Yuping Zeng, 2020, Semiconductor Science and Technology.

Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method

Cheng Li, Songyan Chen, Yuping Zeng, 2019, Semiconductor Science and Technology.

Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing

L. Gundlach, Yuping Zeng, Zhengxin Li, 2020, IEEE Transactions on Electron Devices.

Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Y. Chueh, J. Xiao, Yuping Zeng, 2019, Journal of Physics D: Applied Physics.

Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors

Zhaojun Lin, Yuping Zeng, Peng Cui, 2022, Microelectron. J..

InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

L. Gundlach, Yuping Zeng, Peng Cui, 2020, Japanese Journal of Applied Physics.

Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

Yuping Zeng, Peng Cui, 2022, Scientific Reports.

Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

Yuping Zeng, Peng Cui, 2021 .

Wearable Microsensor Array for Multiplexed Heavy Metal Monitoring of Body Fluids

Wei Gao, Sam Emaminejad, Hiroki Ota, 2016 .

DEMONSTRATION OF HIGH-SPEED (AL,GA)As~.~~SB~.~~/CNP TYPE-I1 UNI-TRAVELING CARRIER PHOTODIODES FOR 1.55~~ OPERATION

S. Watkins, S. Demiguel, Yuping Zeng, 2005 .

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

R. Opila, P. Taheri, A. Javey, 2019, IEEE Transactions on Electron Devices.

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

N. Moser, K. Chabak, J. Xiao, 2023, Semiconductor Science and Technology.

Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Yu-Lun Chueh, Stefano Cabrini, Audrey Harker, 2016, Nature Communications.

High-gain inverters based on WSe2 complementary field-effect transistors.

Yuping Zeng, Ali Javey, Angada B Sachid, 2014, ACS nano.

The effects of ICP dry etching and HF wet etching on the morphology of SiO2 surface

M. Mackay, Roddel A. Remy, Yuping Zeng, 2018, Materials Research Express.

RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

Q. Cheng, S. Khandelwal, Yuping Zeng, 2020 .

InAlN/GaN HEMT on Si With fmax = 270 GHz

J. Xiao, L. Gundlach, Yuping Zeng, 2021, IEEE Transactions on Electron Devices.

Transition from Hopping to Band-like Transport in Weakly Coupled Multilayer MoS2 Field Effect Transistors

Honggang Liu, Bing Sun, Hudong Chang, 2020 .

Monolayer MoS2-based nonvolatile transistors with a titanium nitride in the gate

Honggang Liu, Bing Sun, Hudong Chang, 2019, AIP Advances.

Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions

C. Hu, A. Javey, R. Kapadia, 2013 .

Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2019, Journal of Physics D: Applied Physics.

Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2020, IEEE Electron Device Letters.

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Yuping Zeng, R. Hickey, Peng Cui, 2023, Vacuum.

Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2020, Journal of Physics D: Applied Physics.

A Physics-Based Model of Vertical TFET—Part II: Drain Current Model

Q. Cheng, S. Khandelwal, Yuping Zeng, 2022, IEEE Transactions on Electron Devices.

DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Q. Cheng, S. Khandelwal, Yuping Zeng, 2019, Solid-State Electronics.

Self-aligned gate-last process for quantum-well InAs transistor on insulator

Q. Cheng, S. Khandelwal, Yuping Zeng, 2018 .

The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2019, Journal of Physics D: Applied Physics.

High-gain inverters based on WSe2 complementary field-effect transistors.

A. Javey, A. Sachid, Yongjing Lin, 2014, ACS nano.

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support

C. Hu, A. Javey, A. Sachid, 2015, IEEE Transactions on Nanotechnology.