G. Pavia

发表

Crystal defects and junction properties in the evolution of device fabrication technology

M. Brambilla, E. Bonera, M. Polignano, 2002 .

Evolution of crystallographic ordering in Hf1-xAlxOy high-κ dielectric deposited by atomic layer deposition

C. Wiemer, M. Fanciulli, G. Pavia, 2003 .

Supersoft elastic parameters and low melting temperature of the C49 phase in TiSi2 by Brillouin scattering and molecular dynamics

M. Celino, L. Miglio, M. Iannuzzi, 1999 .

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

A. G. Cullis, A. Benedetti, S. Frabboni, 2003 .

[(Me3Si)2N]3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films

C. Wiemer, M. Fanciulli, A. Zenkevich, 2007 .

Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates

G. Tallarida, C. Wiemer, M. Fanciulli, 2007 .

A study of the growth of Lu2O3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy

M. Fanciulli, S. Nannarone, G. Pavia, 2007 .

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO3 layer

H. Habermeier, U. Kaiser, B. Keimer, 2015 .

Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

M. Perego, S. Spiga, C. Wiemer, 2008 .

Analysis and Suppression of Process-Induced Defects in Memory Devices.

G. Ghidini, G. Servalli, M. Polignano, 2000 .

AFM measurement of the grain size in polycrystalline titanium silicides

S. Spiga, F. Cazzaniga, G. Pavia, 2001 .

Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures

A. Spessot, A. Benedetti, S. Frabboni, 2006 .

Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO 2 Layers

S. Ferrari, S. Spiga, M. Fanciulli, 2000 .

Evaluation of Microstructure Evolution of Al-1%SI-0.5%CU Thin Film Induced By Post Deposition Processing

M. Bacchetta, G. Pavia, C. Savoia, 1996 .

Physical-Chemical Evolution upon Thermal Treatments of Al 2 O 3 , HfO 2 and Al/Hf Composite Materials Deposited by ALCVD™

G. Ottaviani, J. Maes, S. Santucci, 2002 .

Molibdenum contamination in silicon 1. Molibdenum detection by lifetime techniques

C. Bresolin, M. Polignano, G. Pavia, 1998 .

Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques

S. Ferrari, S. Spiga, C. Wiemer, 2003 .

Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing

S. Ferrari, C. Wiemer, M. Fanciulli, 2004 .

Evaluating the Denuded Zone Depth by Measurements of the Recombination Activity of Bulk Defects

S. Spiga, M. Brambilla, M. Polignano, 1998 .

Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism

Simon D. Elliott, Marco Fanciulli, G. Pavia, 2006 .

Novel Applications of Zeiss Libra 200 Cs-Corrected TEM with Energy Filtered Precession Electron Diffraction for Structure Determination of Nanocrystals

M. Gemmi, S. Nicolopoulos, G. Pavia, 2010 .

Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices

Marco Fanciulli, G. Pavia, Claudia Dallera, 2006 .

Metrology issues in thin ONO stacks measurements by spectroscopic ellipsometry and X-ray reflectivity

S. Ferrari, Sangam Banerjee, S. Spadoni, 2004 .

New Approach to Ammonia Synthesis by Catalysis in Magnetic Field

P. Puspitasari, K. Koziol, N. Yahya, 2012 .

Structural and physical analysis on MOCVD Ti-Si-N films

A. Modelli, E. Varesi, A. Zenkevich, 2007 .

Detection of Metal Segregation at the Oxide-Silicon Interface

F. Priolo, A. Giussani, M. Polignano, 2002 .

Analysis of Non-Uniform Contamination Profiles by Lifetime Data

D. Caputo, M. Polignano, G. Pavia, 1998 .

In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations

R. Tonini, G. Pavia, F. Corni, 2002 .

Atomic layer deposition of Lu silicate films using [(Me3Si)2N]3Lu

G. Tallarida, S. Spiga, C. Wiemer, 2006 .